High voltage 650V N Channel MOSFET KIA Semicon Tech KIA65R950FS ideal for AC DC power supply designs
Key Attributes
Model Number:
KIA65R950FS
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
950mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
35W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
KIA65R950FS
Package:
TO-220F-3
Product Description
Product Overview
This 650V N-Channel MOSFET from KIA Semiconductors, model 65R950, utilizes advanced super-junction technology. It is designed to minimize conduction loss, offer superior switching performance, and provide high ruggedness for avalanche and commutation modes. This device is well-suited for high-efficiency AC/DC power conversion in switching mode operations.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 65R950
- Channel Type: N-CHANNEL
- Voltage Rating: 650V
- Current Rating: 5A
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDSS | 650 | V | |||
| Gate-source voltage | VGSS | +30 | V | |||
| Drain current continuous | ID | TC=25C | 5* | A | ||
| Drain current continuous | ID | TC=100C | 4* | A | ||
| Drain current pulsed | IDM | (note1) | 16* | A | ||
| Avalanche energy Repetitive | EAR | (note1) | 34 | mJ | ||
| Avalanche energy Single pulse | EAS | (note2) | 67.5 | mJ | ||
| Avalanche energy | IAR | (note1) | 1 | A | ||
| Peak diode recovery dv/dt | dv/dt | (note3) | 4.5 | V/ns | ||
| Total power dissipation | PD | TC=25 C | 35 | W | ||
| derate above 25 C | 0.3 | W/C | ||||
| Operating and storage temperature range | TJ, TSTG | -55 | +150 | C | ||
| Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds | TL | 300 | C | |||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-ambient | RthJA | 62 | C/W | |||
| Thermal resistance, Junction-case | RthJC | 3.6 | C/W | |||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | TJ=25C, VGS=0V,ID=250A | 650 | V | ||
| Drain-source breakdown voltage | BVDSS | TJ=125C, VGS=0V,ID=250A | 700 | V | ||
| Zero gate voltage drain current | IDSS | VDS=650V ,VGS=0V | 1 | A | ||
| Zero gate voltage drain current | IDSS | VDS=480V ,TC=125C | 10 | A | ||
| Gate-body leakage current | IGSS | VGS=30V,VDS=0V | 100 | nA | ||
| Gate-body leakage current | IGSS | VGS=-30V,VDS=0V | -100 | nA | ||
| Breakdown voltage temperature coefficient | BVDSS/TJ | ID=250A, referenced to 25C | -0.6 | V/ C | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | 4.5 | V | |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=2.5A | 0.85 | 0.95 | ||
| Forward transconductance | gFS | VDS=40V,ID=2.5A (note4) | 8 | S | ||
| Gate resistance | Rg | F=1.0MHZ, Open drain | 3.5 | |||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | 320 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse transfer capacitance | Crss | 4 | pF | |||
| Turn-on delay time | td(on) | VDD=400V,ID=2.5A, RG=20 (note4,5) | 18 | ns | ||
| Rise time | tr | 40 | ns | |||
| Turn-off delay time | td(off) | 50 | ns | |||
| Fall time | tf | 30 | ns | |||
| Total gate charge | Qg | VDS=480V,ID=5A , VGS=10V (note4,5) | 15 | nC | ||
| Gate-source charge | Qgs | 3 | nC | |||
| Gate-drain charge | Qg | 6 | nC | |||
| Drain-source diode forward voltage | VSD | VGS=0V,ISD=5A | 1.5 | V | ||
| Continuous drain-source current | IS | 5 | A | |||
| Pulsed drain-source current | ISM | 16 | A | |||
| Reverse recovery time | trr | VGS=0V,ISD=5A dlF/dt=100A/s (note4) | 180 | ns | ||
| Reverse recovery charge | Qrr | 2.5 | C | |||
2410121331_KIA-Semicon-Tech-KIA65R950FS_C135556.pdf
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