Power switching MOSFET KEXIN KO3416 N Channel with low on resistance and enhanced durability features

Key Attributes
Model Number: KO3416
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-
RDS(on):
16mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
87pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
1.295nF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KO3416
Package:
SOT-23-3
Product Description

Product Overview

This N-Channel Enhancement MOSFET from Kexin is designed for various applications requiring efficient power switching. It features a low on-resistance and robust performance characteristics, making it suitable for demanding electronic designs.

Product Attributes

  • Brand: Kexin
  • SMD Type: Yes
  • Origin: www.kexin.com.cn
  • Model Number: AO3416 (KO3416)

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageVDSSID=250uA, VGS=0V20V
Gate-Body Leakage CurrentIGSSVDS=0V, VGS=8Vf10uA
Gate Threshold VoltageVGS(th)VDS=VGS , ID=250uA0.40.71.1V
On-State Drain CurrentID(on)VDS =5 V, VGS = 4.5 V30A
Static Drain-Source On-ResistanceRDS(On)VGS=4.5V, ID=6.5A1622m
VGS=4.5V, ID=6.5A TJ=1252230m
VGS=2.5V, ID=5.5A1826m
VGS=1.8V, ID=5A2134m
Forward TransconductancegFSVDS=5V, ID=6.5A50S
Input CapacitanceCissVDS=10V, VGS=0V,f=1MHz12951650pF
Output CapacitanceCossVDS=10V, VGS=0V,f=1MHz160pF
Reverse Transfer CapacitanceCrssVDS=10V, VGS=0V,f=1MHz87pF
Gate ResistanceRgVGS=0V,VDS=0V,f=1MHz1.8
Total Gate ChargeQgVDS=10V, ID=6.5A10nC
Gate Source ChargeQgsVDS=10V, ID=6.5A4.2nC
Gate Drain ChargeQg dVDS=10V, ID=6.5A2.6nC
Turn-On Delay Timetd(on)VDS=10V, ,VGEN=4.5V RL=1.54,RG=3280ns
Turn-On Rise TimetrVDS=10V, ,VGEN=4.5V RL=1.54,RG=3328ns
Turn-Off Delay Timetd(off)VDS=10V, ,VGEN=4.5V RL=1.54,RG=33.76s
Turn-Off Fall TimetfVDS=10V, ,VGEN=4.5V RL=1.54,RG=32.24s
Body Diode Reverse Recovery TimetrrIF= 6.5A, dI/dt= 100A/s3141ns
Body Diode Reverse Recovery ChargeQrrIF= 6.5A, dI/dt= 100A/s6.8nC
Maximum Body-Diode Continuous CurrentIS2A
Diode Forward VoltageVSDIS=1.0A,VGS=0V0.621V
Zero Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V1A
Zero Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V, Ta=705A

2410122018_KEXIN-KO3416_C489378.pdf

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