AC Power Control Device KY BTA16-800B TRIAC with 16A RMS Current and 1000V Peak Off State Voltage

Key Attributes
Model Number: BTA16-800B
Product Custom Attributes
Holding Current (Ih):
50mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
1kV
Current - Surge(Itsm@f):
180A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTA16-800B
Package:
TO-220A
Product Description

BTA/BTB16 Series TRIACs

The BTA/BTB16 Series TRIACs from ShenZhenHanKingyuan Electronic are high-performance semiconductor devices designed for AC power control applications. Available in 3 and 4 quadrant configurations, these TRIACs offer robust performance with an RMS on-state current of 16A and repetitive peak off-state voltages up to 1000V. They are suitable for a wide range of applications including washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Origin: Shenzhen
  • Product Series: BTA/BTB16 Series
  • TRIAC Type: 3 Quadrants, 4 Quadrants
  • Available Packages: TO-220A (Insulated), TO-220B (Non-Insulated), TO-220F (Insulated), TO-263

Technical Specifications

SymbolParameterConditionsBTA16/BTB16-600BTA16/BTB16-800Unit
VDRMRepetitive Peak Off-State Voltage8001000V
VRRMRepetitive Peak Off-State Voltage8001000V
IT(RMS)R.M.S On-State CurrentTc=110C1616A
ITSMSurge On-State Current170/180170/180A
ItIt for fusingTp=10ms116116As
PG(AV)Average Gate Power DissipationTj=125C11W
IGMPeak Gate CurrentTj=125C, tp=20us44A
TjOperating Junction Temperature-40~125-40~125C
TSTGStorage Temperature-40~150-40~150C
IDRMRepetitive Peak Off-State CurrentTj=25C55uA
IDRMRepetitive Peak Off-State CurrentTc=125C11mA
IRRMRepetitive Peak Reverse CurrentTc=25C55uA
IRRMRepetitive Peak Reverse CurrentTc=125C11mA
VTMForward "on" voltageIT=23A, tp=380us1.51.5V
VGTGate trigger voltageVD=12V ,RL=301.51.5V
di/dtCritical rate of rise of on- state currentI,II,III F=100Hz, IG=2xIGT, tr100ns5050A/us
di/dtCritical rate of rise of on- state currentIV1010A/us
IGTGate trigger currentI,II,III VD=12V, RL=3010 / 25 / 50 / 25 / 5010 / 25 / 50 / 25 / 50mA
IGTGate trigger currentIV50 / 10050 / 100mA
IHHolding currentIT=0.2A25 / 35 / 50 / 25 / 5025 / 35 / 50 / 25 / 50mA
VGDGate non-trigger voltageVD=VDRM, TJ=125C,RL=3.3K0.20.2V
dv/dtCritical-rate of rise of commutation voltageTJ=125C, VD=2/3VDRM, Gate100 / 400 / 1000 / 200 / 400100 / 400 / 1000 / 200 / 400V/us

2410311002_KY-BTA16-800B_C7437431.pdf

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