Power Switching Device KEXIN FDC3612 HF N Channel MOSFET with 2.6A Drain Current and 100V Voltage
Key Attributes
Model Number:
FDC3612-HF
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
125mΩ@10V,2.6A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
40pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
660pF@50V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
FDC3612-HF
Package:
SOT-23-6
Product Description
Product Overview
The FDC3612-HF is an N-Channel MOSFET designed for efficient power switching applications. It features a high breakdown voltage of 100V and a continuous drain current of 2.6A. With low on-resistance values (RDS(ON) < 125m at VGS=10V) and fast switching speeds, this MOSFET is suitable for various electronic circuits requiring reliable and high-performance switching.
Product Attributes
- Brand: Kexin
- Part Number: FDC3612-HF
- SMD Type: SOT-23-6
- Channel Type: N-Channel
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V, VGS=0V | 10 | A | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 2 | 4 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=2.6A | 125 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=6V, ID=2.5A | 135 | m | ||
| On State Drain Current | ID(ON) | VGS=10V, VDS=5V | 10 | A | ||
| Forward Transconductance | gFS | VDS=10V, ID=2.6A | 10 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=50V, f=1MHz | 660 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=50V, f=1MHz | 40 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=50V, f=1MHz | 40 | pF | ||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=2.6A | 14 | 20 | nC | |
| Gate Source Charge | Qgs | VGS=10V, VDS=50V, ID=2.6A | 2.3 | nC | ||
| Gate Drain Charge | Qgd | VGS=10V, VDS=50V, ID=2.6A | 3.6 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, ID=1A,RG=6 | 6 | 11 | ns | |
| Turn-On Rise Time | tr | VGS=10V, ID=1A,RG=6 | 3.5 | 7 | ns | |
| Turn-Off Delay Time | td(off) | VGS=10V, ID=1A,RG=6 | 23 | 37 | ns | |
| Turn-Off Fall Time | tf | VGS=10V, ID=1A,RG=6 | 3.7 | 7.4 | ns | |
| Body Diode Reverse Recovery Time | trr | IF= 2.6A, dI/dt= 100A/s | 31 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF= 2.6A, dI/dt= 100A/s | 56 | nC | ||
| Drain-Source Avalanche Energy | WDSS | Single Pulse,VDD=50V, ID=2.6A | 90 | mJ | ||
| Maximum Body-Diode Continuous Current | IS | 1.3 | A | |||
| Diode Forward Voltage | VSD | IS=1.3A,VGS=0V | 1.2 | V |
2410121742_KEXIN-FDC3612-HF_C489383.pdf
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