High voltage 4 quadrant triac KY BT134-600E designed for ac power control and motor speed regulation

Key Attributes
Model Number: BT134-600E
Product Custom Attributes
Holding Current (Ih):
-
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
27A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT134-600E
Package:
TO-126
Product Description

ShenZhenHanKingyuan Electronic BT134 Series 4A TRIACs

The BT134 Series TRIACs from ShenZhenHanKingyuan Electronic are 4-quadrant TRIACs designed for various AC power control applications. They offer reliable performance with a repetitive peak off-state voltage of up to 800V and an RMS on-state current of 4A. These TRIACs are suitable for use in washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation, providing efficient and robust control solutions.

Product Attributes

  • Brand: ShenZhenHanKingyuan Electronic
  • Product Series: BT134 Series
  • Type: 4 Quadrants TRIACs
  • Origin: Shenzhen

Technical Specifications

Parameter Conditions BT134-600 Unit
Repetitive Peak Off-State Voltage (VDRM, VRRM) 600 V
R.M.S On-State Current (IT(RMS)) Tc=110C 4 A
Surge On-State Current (ITSM) 25/27 A
It for fusing Tp=10ms 3.1 As
Average Gate Power Dissipation (PG(AV)) Tj=125C 0.5 W
Peak Gate Current (IGM) Tj=125C, tp=20us 2 A
Operating Junction Temperature (Tj) -40~125 C
Storage Temperature (TSTG) -40~150 C
Repetitive Peak Off-State Current (IDRM) Tj=25C ≤10 uA
Repetitive Peak Off-State Current (IDRM) Tj=125C ≤0.5 mA
Repetitive Peak Reverse Current (IRRM) Tj=25C ≤10 uA
Repetitive Peak Reverse Current (IRRM) Tj=125C ≤0.5 mA
Forward "on" voltage (VTM) IT=5A, tp=380us ≤1.7 V
Gate non-trigger voltage (VGD) VD=12V,Tj=125C ≥0.2 V
Holding current (IH) VD=12V ,IGT=0.1A ≤10 / ≤15 (IV) mA
Gate trigger voltage (VGT) VD=12V ≤1.5 V
Gate trigger current (IGT) VD=12V, I,II,III ≤5 / ≤10 (IV) mA
Critical-rate of rise of commutation current (di/dt) IT=6A ,IGT==0.2A, dIg/dt=0.2A/us, I,II,III ≥50 / ≥10 (IV) A/us
Critical-rate of rise of commutation voltage (dv/dt) TJ=125C VD=2/3VDRM Gate open circuit ≥5 / ≥50 (tp=10ms / tp=16.7ms) V/us

2410121251_KY-BT134-600E_C2831687.pdf

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