Low On Resistance P Channel MOSFET KEXIN KX5P02 Ideal for Electronic Switching and Power Management
Key Attributes
Model Number:
KX5P02
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
2W
Mfr. Part #:
KX5P02
Package:
SOIC-8
Product Description
Product Overview
The KX5P02 is a P-Channel MOSFET designed for various electronic applications. It features a low on-resistance and robust performance characteristics, making it suitable for power management and switching tasks.
Product Attributes
- Brand: Kexin
- Origin: www.kexin.com.cn
- SMD Type: SOP-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-18V, VGS=0V | -1 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=10V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.9 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-5A | 50 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4A | 85 | m | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 4 | S | ||
| Maximum Body-Diode Continuous Current | IS | -1.3 | A | |||
| Diode Forward Voltage | VSD | IS=-1.3A,VGS=0V | -1.1 | V | ||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | VGS =-10V | -5 | A | ||
| Power Dissipation | PD | Ta = 25 | 2 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | 62.5 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Junction Storage Temperature Range | Tstg | -55 | 150 |
2410121813_KEXIN-KX5P02_C489345.pdf
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