N Channel Enhancement MOSFET KEXIN KO3404 with 30V Drain Source Voltage and 5.8A Continuous Current
Key Attributes
Model Number:
KO3404
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
43mΩ@4.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF@24V
Number:
1 N-channel
Input Capacitance(Ciss):
820pF@24V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
17nC@10V;8.1nC@4.5V
Mfr. Part #:
KO3404
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement MOSFET, identified as AO3404 (KO3404), is designed for surface-mount applications. It features a drain-source voltage of 30V and a continuous drain current of 5.8A at VGS=10V. With low on-resistance values of 28m (VGS=10V) and 43m (VGS=4.5V), it is suitable for various power management applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by .cn domain)
- Type: SMD Type IC, SMD Type MOSFET
- Marking: A4*
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 30 | V | ||
| VDS=24V, VGS=1V | V | |||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1 | 1.9 | 3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=3.45A | 43 | m | ||
| VGS=10V, ID=5.8A | 28 | m | ||||
| VGS=10V, ID=5.8A, TJ=125C | 31.3 | 38 | m | |||
| VGS=4.5V, ID=3.45A, TJ=125C | 50.5 | 60 | m | |||
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V | 1.0E-05 | 1.0E-04 | A | |
| VDS=24V, VGS=0V, TJ=55C | 1.0E-04 | 1.0E-03 | A | |||
| Forward Transconductance | gFS | VDS=5V, ID=5.8A | 8.5 | S | ||
| Body Diode Continuous Current | IS | 2.5 | A | |||
| Reverse Transfer Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 680 | 820 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 102 | pF | ||
| Input Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 77 | pF | ||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, ID=5.8A | 13.88 | 17 | nC | |
| Gate Charge | Qg(4.5V) | VGS=4.5V, VDS=15V, ID=3.45A | 6.78 | 8.1 | nC | |
| Source-Gate Charge | Qgs | 1.8 | nC | |||
| Drain-Gate Charge | Qgd | 3.12 | nC | |||
| Turn-On Delay Time | tr | 4.6 | 6.5 | ns | ||
| Turn-On Rise Time | tf | 5 | 7.5 | ns | ||
| Turn-Off Delay Time | td(off) | 3.8 | 5.7 | ns | ||
| Turn-Off Fall Time | tf(off) | 20.9 | 30 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=5.8A, dI/dt=100A/s | 16.1 | 21 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=5.8A, dI/dt=100A/s | 7.4 | 10 | nC | |
| Power Dissipation | PD | Ta=25C | 1.4 | W | ||
| Ta=70C | 1 | W | ||||
| Thermal Resistance Junction-to-Lead | RthJL | Steady State | 60 | C/W | ||
| Thermal Resistance Junction-to-Ambient | RthJA | Steady State | 90 | C/W | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Continuous Drain Current | ID | Ta=25C | 5.8 | A | ||
| Ta=100C | 4.9 | A | ||||
| Pulsed Drain Current | IDM | Ta=25C, t 5sec | 20 | A | ||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | -20 | 20 | V |
2409302301_KEXIN-KO3404_C489374.pdf
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