Power Semiconductor KIA Semicon Tech KSZ080N120A 28A 1200V SiC N Channel MOSFET for Solar Inverters
Key Attributes
Model Number:
KSZ080N120A
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
28A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ@20V
Gate Threshold Voltage (Vgs(th)):
4V@5mA
Pd - Power Dissipation:
166W
Mfr. Part #:
KSZ080N120A
Package:
TO-247-4
Product Description
Product Overview
The KIA SEMICONDUCTORS 080N120A is a 28A, 1200V SiC N-CHANNEL MOSFET. It features low on-resistance (RDS(ON)=80m typ.), high blocking voltage, high-speed switching with low capacitances, and avalanche ruggedness. This MOSFET is suitable for applications such as solar inverters, switch mode power supplies, high voltage DC-DC converters, and battery chargers.
Product Attributes
- Brand: KIA
- Part Number: KSZ080N120A
- Package: TO-247-4
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250uA | 1200 | - | - | V |
| Drain-source leakage current | IDSS | VDS=1200V,VGS=0V, TC=25C | - | 1 | 100 | uA |
| Gate-source leakage current | IGSS | VGS=20V, VDS=0V | - | 20 | 200 | nA |
| Drain-source on-resistance | RDS(on) | VGS=20V,ID=20A,TJ=25C | - | 80 | 98 | m |
| Gate threshold voltage | VGS(TH) | VDS=VGS,ID=5mA | 2.0 | 2.4 | 4.0 | V |
| Transconductance | gFS | VDS=20V,ID=20A | - | 7.0 | - | S |
| Gate Resistance | Rg | VGS=0V,VAC=25mV, f=1MHz | - | 2.8 | - | |
| Input capacitance | Ciss | VDS=1000V,VGS=0V f=1MHz,VAC=25mV | - | 2025 | - | pF |
| Reverse transfer capacitance | Crss | VDS=1000V,VGS=0V f=1MHz,VAC=25mV | - | 17.5 | - | pF |
| Output capacitance | Coss | VDS=1000V,VGS=0V f=1MHz,VAC=25mV | - | 71.9 | - | pF |
| Total gate charge | Qg | VDD=800V, ID=20A VGS=-5 to +20V | - | 86 | - | nC |
| Gate-source charge | Qgs | VDD=800V, ID=20A VGS=-5 to +20V | - | 20 | - | nC |
| Gate-drain charge | Qgd | VDD=800V, ID=20A VGS=-5 to +20V | - | 25 | - | nC |
| Turn-on delay time | td(on) | VDS=800V,VGS=-5 to +20V, RG=5, ID=20A,TJ=25C, inductive load | - | 22 | - | ns |
| Rise time | tr | VDS=800V,VGS=-5 to +20V, RG=5, ID=20A,TJ=25C, inductive load | - | 62 | - | ns |
| Turn-off delay time | td(off) | VDS=800V,VGS=-5 to +20V, RG=5, ID=20A,TJ=25C, inductive load | - | 18 | - | ns |
| Fall time | tf | VDS=800V,VGS=-5 to +20V, RG=5, ID=20A,TJ=25C, inductive load | - | 12 | - | ns |
| Turn-On Switching Energy | EON | VDS=800V,VGS=-5 to +20V, RG=5,ID=20A, TJ=25C,L=142uH | - | 180 | - | uJ |
| Turn-Off Switching Energy | EOFF | VDS=800V,VGS=-5 to +20V, RG=5,ID=20A, TJ=25C,L=142uH | - | 70 | - | uJ |
| Diode forward voltage | VSD | ISD=10A,VGS=-5V,TJ=25C | - | 3.5 | - | V |
| Diode forward voltage | VSD | ISD=10A,VGS=-5V,TJ=150C | - | 3.3 | - | V |
| Reverse Recovery Time | trr | ISD=20A,VGS=-5V, dl/dt=2000A/us, VDS=800V | - | 18 | - | ns |
| Reverse Recovery Charge | Qrr | ISD=20A,VGS=-5V, dl/dt=2000A/us, VDS=800V | - | 80 | - | nC |
| Peak Reverse Recovery Current | Irrm | ISD=20A,VGS=-5V, dl/dt=2000A/us, VDS=800V | - | 8 | - | A |
| Continuous Drain Current | ID | TC=25C | - | 28 | - | A |
| Continuous Drain Current | ID | TC=100C | - | 20 | - | A |
| Pulsed Drain Current | ID pulse | (TC=25C, tp limited by Tjmax) | - | 60 | - | A |
| Single Pulse Avalanche Energy | EAS | (L=10mH) | - | 720 | - | mJ |
| Power Dissipation | PD | - | 166 | - | W | |
| Operating and Storage Temperature Range | TJ&TSTG | -55 | - | 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | - | 0.75 | - | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 35 | - | C/W | |
| Drain-to-Source Voltage | VDSS | - | 1200 | - | V | |
| Gate-to-Source Operation Voltage | VGSS | -5 | - | +20 | V |
2411121030_KIA-Semicon-Tech-KSZ080N120A_C20623397.pdf
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