SMD Type SOT 23 3 KEXIN SI2304DS N Channel Enhancement MOSFET Designed for Various Electronic Circuits
Key Attributes
Model Number:
SI2304DS
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-
RDS(on):
92mΩ@10V,2.5A
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
17pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
240pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
2.4nC@5V
Mfr. Part #:
SI2304DS
Package:
SOT-23
Product Description
Product Overview
The SI2304DS (KI2304DS) is a high-performance N-Channel Enhancement MOSFET designed for various electronic applications. It features a low Drain-Source On-Resistance (RDS(ON)) at different gate-source voltages, making it efficient for switching and amplification tasks. This MOSFET is housed in a compact SOT-23-3 SMD package, suitable for space-constrained designs.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 30 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1.5 | 3 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 0.5 | A | ||
| Zero Gate Voltage Drain Current (Ta=55) | IDSS | VDS=30V, VGS=0V, Ta=55 | 10 | A | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=10V, ID=2.5A | 92 | 117 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=2.0A | 142 | 190 | m | |
| On-State Drain Current | ID(on) | VDS 4.5 V, VGS = 10 V | 6 | A | ||
| On-State Drain Current | ID(on) | VDS 4.5 V, VGS = 4.5 V | 4 | A | ||
| Forward Transconductance | gFS | VDS=4.5V, ID=2.5A | 4.6 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 240 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 110 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 17 | pF | ||
| Total Gate Charge | Qg | VDS=15V,VGS=5V,ID=2.5A | 2.4 | 4 | nC | |
| Gate-Source Charge | Qgs | VDS=15V,VGS=5V,ID=2.5A | 0.8 | nC | ||
| Gate Drain Charge | Qgd | VDS=15V,VGS=5V,ID=2.5A | 1.0 | nC | ||
| Turn-On Delay Time | td(on) | VGS=10V, VDS=15V, ID=2.5A | 8 | 20 | ns | |
| Turn-On Rise Time | tr | VGS=10V, VDS=15V, ID=2.5A | 12 | 30 | ns | |
| Turn-Off Delay Time | td(off) | ID=1A, VDS=15V, RGEN=6 | 17 | 35 | ns | |
| Turn-Off Fall Time | tf | ID=1A, VDS=15V, RGEN=6 | 8 | 20 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1.25 | A | |||
| Diode Forward Voltage | VSD | IS=1.25A,VGS=0V | 0.77 | 1.2 | V | |
| Continuous Drain Current | ID | Ta=25 | 2.5 | A | ||
| Continuous Drain Current | ID | Ta=70 | 2.0 | A | ||
| Pulsed Drain Current | IDM | Ta=25 | 10 | A | ||
| Power Dissipation | PD | Ta=25 | 1.25 | W | ||
| Power Dissipation | PD | Ta=70 | 0.8 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on FR4 Board, t 5 sec. | 100 | /W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on FR4 Board. | 166 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2410121715_KEXIN-SI2304DS_C489363.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
