power management solution featuring KIA Semicon Tech KPS6110B P channel MOSFET with trench technology
Key Attributes
Model Number:
KPS6110B
Product Custom Attributes
Mfr. Part #:
KPS6110B
Package:
SOT-89
Product Description
Product Overview
The KIA SEMICONDUCTORS KPS6110B is a P-CHANNEL MOSFET featuring Advanced Trench MOS Technology, offering reliable and rugged performance. This green device is suitable for power management and DC motor control applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KPS6110B
- Package: SOT-89
- Origin: KIA
- Material: MOSFET
- Color: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -100 | - | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5A | - | 170 | 210 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-5A | - | 190 | 240 | m |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | -1.2 | - | -2.5 | V |
| Drain-Source Leakage Current | IDSS | VDS=-80V,VGS=0V,TJ=25C | - | - | 1 | uA |
| Drain-Source Leakage Current | IDSS | VDS=-80V,VGS=0V,TJ=85C | - | - | 30 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 13 | - | |
| Total Gate Charge | Qg | VDS=-50V, VGS=-10V , ID=-5A | - | 19 | - | nC |
| Gate-Source Charge | Qgs | - | 3.4 | - | nC | |
| Gate-Drain Charge | Qgd | - | 2.9 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=-30V,VGS=-10V, RG=3.3,ID=-1A | - | 9 | - | ns |
| Rise Time | Tr | - | 6 | - | ns | |
| Turn-Off Delay Time | Td(off) | - | 39 | - | ns | |
| Fall Time | Tf | - | 33 | - | ns | |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | - | 1228 | - | pF |
| Output Capacitance | Coss | - | 41 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 29 | - | pF | |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | -5 | A |
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A , TJ=25C | - | - | -1.2 | V |
| Continuous Drain Current | ID | TC=25C | - | -12 | - | A |
| Continuous Drain Current | ID | TC=100C | - | -8.4 | - | A |
| Pulsed Drain Current | IDM | - | -48 | - | A | |
| Avalanche Energy | EAS | - | 49 | - | mJ | |
| Avalanche Current | IAS | -14 | - | - | A | |
| Total Power Dissipation | PD | - | 39 | - | W | |
| Operation Junction Temperature Range | TJ | -55 | - | 150 | C | |
| Storage Temperature Range | TSTG | -55 | - | 150 | C | |
| Thermal Resistance, Junction-to-Ambient | RJA | - | - | 55 | C/W | |
| Thermal Resistance, Junction-to-Case | RJC | - | 3.2 | - | C/W |
2508261745_KIA-Semicon-Tech-KPS6110B_C7465120.pdf
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