Switching N Channel MOSFET KEXIN SI2306 with 30 Volt Drain Source Voltage and SOT 23 3 Surface Mount
Key Attributes
Model Number:
SI2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
94mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
555pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
SI2306
Package:
SOT-23
Product Description
Product Overview
The SI2306 (KI2306) is a N-Channel 30-V (D-S) MOSFET in an SOT-23-3 SMD package. It is designed for various applications requiring efficient switching and low on-resistance. Key features include a low VDS of 30V and low RDS(ON) values of < 57m (VGS =-10V) and < 94 m (VGS =-4.5V). This MOSFET is suitable for applications where space and power efficiency are critical.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | 3.5 | A | Ta=25 *1 |
| 2.8 | A | Ta=70 *1 | ||
| Pulsed Drain Current | IDM | 16 | A | t ≤ 5 sec |
| Power Dissipation | PD | 1.25 | W | Ta=25 *1 |
| 0.8 | W | Ta=70 *1 | ||
| Thermal Resistance, Junction-to-Ambient | RthJA | 100 | /W | t ≤ 5 sec |
| 130 | /W | Steady State | ||
| Junction Temperature | TJ | 150 | ||
| Storage Temperature Range | Tstg | -55 to 150 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 250 uA |
| Gate threshold voltage | GS(th) | 1 to 3 | V | VDS = VGS, ID = 250 uA |
| Gate-source leakage current | GSS | ±100 | nA | VDS = 0 V, VGS = ±20 V |
| Drain-source leakage current | DSS | 10 | uA | VDS = 30V, VGS = 0 V, TJ = 55 |
| 5 | uA | VDS = 30V, VGS = 0 V, TJ = 150 | ||
| Drain-source on-state resistance | rDS(on) | 57 | mΩ | VGS = -10 V, ID = 3.5 A |
| 94 | mΩ | VGS = -4.5 V, ID = 2.8 A | ||
| Forward Transconductance | fs | 5.3 | S | VDS = 4.5 V, ID = 3.5 A |
| Input Capacitance | iss | 555 | pF | VDS = 15V, VGS = 5V, f = 1 MHz |
| Output Capacitance | oss | 120 | pF | VDS = 15V, VGS = 5V, f = 1 MHz |
| Reverse Transfer Capacitance | rss | 60 | pF | VDS = 15V, VGS = 5V, f = 1 MHz |
| Total Gate Charge | Qg | 4.2 | nC | VDS = 15V, VGS = 5V, ID = 3.5 A |
| Gate Charge (G-S) | gs | 1.9 | nC | |
| Gate Charge (G-D) | gd | 1.35 | nC | |
| Turn-on delay time | td(on) | 7.5 | ns | Pulse test: PW ≤ 300 us, duty cycle ≤ 2% |
| Turn-on rise time | tr | 18 | ns | Pulse test: PW ≤ 300 us, duty cycle ≤ 2% |
| Turn-off delay time | td(off) | 17 | ns | Pulse test: PW ≤ 300 us, duty cycle ≤ 2% |
| Turn-off fall time | tf | 12 | ns | Pulse test: PW ≤ 300 us, duty cycle ≤ 2% |
| Source-Drain Diode Forward Voltage | VSD | 1.2 | V | IS = 3.5 A, VGS = 0 V |
2410121740_KEXIN-SI2306_C382303.pdf
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