switching MOSFET KIA Semicon Tech KND4365A with low on resistance and 650V drain source voltage rating
Key Attributes
Model Number:
KND4365A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@10V,2A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.85pF
Number:
1 N-channel
Input Capacitance(Ciss):
523pF
Output Capacitance(Coss):
58.7pF
Pd - Power Dissipation:
55W
Gate Charge(Qg):
15.7nC@10V
Mfr. Part #:
KND4365A
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The KIA SEMICONDUCTORS 4365A is a 650V N-CHANNEL MOSFET designed for high-frequency switching mode power supplies, uninterruptible power supplies (UPS), and electronic ballasts. It features a low on-resistance (RDS(ON) typ.=2.0 @VGS=10V,ID=2A), fast switching speeds, and is 100% avalanche tested with improved dv/dt capability.
Product Attributes
- Brand: KIA
- Part Number: KND4365A (TO-252), KNF4365A (TO-220F)
Technical Specifications
| Parameter | Symbol | Conditions | TO252 | TO220F | Units | |
| Drain-source voltage | VDSS | 650 | 650 | V | ||
| Gate-source voltage | VGSS | ±30 | ±30 | V | ||
| Continuous Drain Current | ID | TC=25 ºC | 4* | 4* | A | |
| TC=100 ºC | 2.78* | 2.78* | A | |||
| Pulsed Drain Current | IDM | note1 | 16* | 16* | A | |
| Single Pulse Avalanche Energy | EAS | note2 | 180 | mJ | ||
| Peak Diode Recovery Energy | note3 | 4.8 | V/ns | |||
| Power Dissipation | PD | TC=25 ºC | 55 | 44.6 | W | |
| Linear Derating Factor | TC > 25 ºC | 0.46 | 0.357 | W/ºC | ||
| Thermal Resistance, Junction to Case | RθJC | 2.16 | 3.75 | ºC/W | ||
| Operating and Storage Temperature Range | TL,TSTG | -55~+150 | -55~+150 | ºC | ||
| Drain-source breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 650 | V | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DS S /ΔTJ | ID=250μA, referenced to 25ºC | - | 0.65 | V/ºC | |
| Zero Gage Voltage Drain Source | IDSS | VDS=640V ,VGS=0V | - | 1 | μA | |
| VDS=512V , TC=125ºC | - | 10 | μA | |||
| Gate to Body Leakage Current | IGSS | VGS=±30V, VDS=0V | - | ±100 | nA | |
| Gate threshold voltage | VGS(TH) | VDS=VGS, ID=250μA | 2 | - | 4 | V |
| Staticdrain-source on-resistance | RDS(ON) | VGS=10V,ID=2A | - | 2.0 | 2.5 | Ω |
| Forward Transconductance | GFS | VDS=30V,ID=2A | - | 6 | S | |
| Input capacitance | CISS | VDS=25V,VGS=0V, f=1.0 MHz | - | 523 | pF | |
| Output capacitance | COSS | f=1.0 MHz | - | 58.7 | pF | |
| Reverse transfer capacitance | CRSS | - | 9.85 | pF | ||
| Total gate charge | QG | VDD=512V, ID=4.0A, VGS=10V | - | 15.7 | nC | |
| Gate-source charge | QGS | - | 2.43 | nC | ||
| Gate-drain charge | QGD | - | 6.72 | nC | ||
| Turn-on delay time | tD(ON) | VDD=320V,ID=4.0A, RG=10Ω,VGS=10V | - | 12.1 | ns | |
| Rise time | tR | - | 14.9 | ns | ||
| Turn-off delay time | tD(OFF) | - | 36.8 | ns | ||
| Fall time | tF | - | 11.3 | ns | ||
| Drain-source diode forward voltage | VSD | VGS=0V, IS=4.0A | - | - | 1.4 | V |
| Continuous drain-source current | IS | - | - | 4 | A | |
| Pulsed drain-source current | ISM | - | - | 16 | A | |
| Reverse recovery time | tRR | VGS=0V,IF=4A, dI/dt=100A/μs | - | 312 | ns | |
| Reverse recovery charge | QRR | - | 1.81 | μC |
2411121021_KIA-Semicon-Tech-KND4365A_C176867.pdf
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