N Channel Enhancement Mode MOSFET KEXIN KO3400 with SOT 23 Package and 30V Drain Source Voltage Rating
Key Attributes
Model Number:
KO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
KO3400
Package:
SOT-23
Product Description
Product Overview
The KO3400 (AO3400) is an N-Channel Enhancement Mode Field Effect Transistor designed for SMD applications. It offers a 30V drain-source voltage and a continuous drain current of 5.8A at 25C (VGS = 10V). This MOSFET features low on-resistance values at various gate-source voltages, making it suitable for power switching applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by www.kexin.com.cn)
- Type: SMD Type IC, SMD Type MOSFET
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250 A, VGS=0V | 30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250 A | 0.7 | 1.1 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.8A | 28 | m | ||
| VGS=10V, ID=5.8A, TJ=125C | 32 | 39 | m | |||
| VGS=4.5V, ID=5A | 27.3 | 33 | m | |||
| VGS=2.5V, ID=4A | 43.3 | 52 | m | |||
| On state drain current | ID(ON) | VGS=4.5V, VDS=5V | 30 | A | ||
| Forward Transconductance | gFS | VDS=5V, ID=5A | 10 | 15 | S | |
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 823 | 1050 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=15V, f=1MHz | 99 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=15V, f=1MHz | 77 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 1.4 | |||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, RL=2.7, RGEN=3 | 9.7 | 12 | nC | |
| Gate Source Charge | Qgs | 1.6 | nC | |||
| Gate Drain Charge | Qgd | 3.1 | nC | |||
| Turn-On DelayTime | tD(on) | 3.3 | 5 | ns | ||
| Turn-On Rise Time | tr | 4.8 | 7 | ns | ||
| Turn-Off DelayTime | tD(off) | 26.3 | 40 | ns | ||
| Turn-Off Fall Time | tf | 4.1 | 6 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=5A, dI/dt=100A/s | 16 | 20 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=5A, dI/dt=100A/s | 8.9 | 12 | nC | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | |||
| Pulsed Body-Diode Current | ISM | * | 30 | A | ||
| Diode Forward Voltage | VSD | IS=1A, VGS=0V | 0.71 | 1 | V | |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=15V | 1 | A |
2409302300_KEXIN-KO3400_C369934.pdf
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