High Voltage Power MOSFET KIA Semicon Tech KIA12N65H 650V 12A N Channel for Power Factor Correction
Key Attributes
Model Number:
KIA12N65H
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
54W
Gate Charge(Qg):
90nC@10V
Mfr. Part #:
KIA12N65H
Package:
TO-220F-3
Product Description
Product Overview
The KIA12N65H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key advantages include low gate charge, fast switching capability, specified avalanche energy, and improved dv/dt capability.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 12N65H
- Type: N-CHANNEL MOSFET
- Voltage Rating: 650V
- Current Rating: 12A
- Origin: Not Specified
- Material: Silicon Gate
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-source voltage | VDSS | 650 | V | |||
| Drain-source voltage | VGSS | ±30 | V | |||
| Drain current continuous | ID | TC=25 C | 12.0* | A | ||
| Drain current continuous | ID | TC=100 C | 7.4* | A | ||
| Drain current pulsed | IDP | (note 1) | 48.0* | A | ||
| Avalanche energy Repetitive | EAR | (note 1) | 23.1 | mJ | ||
| Avalanche energy Single pulse | EAS | (note 2) | 865 | mJ | ||
| Peak diode recovery dv/dt | dv/dt | (note 3) | 4.5 | V/ns | ||
| Total power dissipation | PD | TC=25 C | 54 | W | ||
| Total power dissipation derate | above 25 C | 0.43 | W/C | |||
| Junction temperature | TJ | +150 | C | |||
| Storage temperature | TSTG | -55 | +150 | C | ||
| Thermal resistance,Junction--ambient | RthJA | 62.5 | C/W | |||
| Thermal resistance,Junction-case | RthJC | 2.33 | C/W | |||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 650 | V | ||
| Zero gate voltage drain current | IDSS | VDS=650V ,VGS=0V | 1 | µA | ||
| Zero gate voltage drain current | IDSS | VDS=520V ,TC=125ºC | 10 | µA | ||
| Gate-body leakage current Forward | IGSS | VGS=30V,VDS=0V | 100 | nA | ||
| Gate-body leakage current Reverse | IGSS | VGS=-30V,VDS=0V | -100 | nA | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | ID=250µA | -0.7 | V/ºC | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250µA | 2.0 | 4.0 | V | |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=6.0A | 0.63 | 0.75 | Ω | |
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | 1850 | pF | ||
| Output capacitance | Coss | 180 | pF | |||
| Reverse transfer capacitance | Crss | 20 | pF | |||
| Turn-on delay time | td(on) | VDD=325V,ID=12.0A, RG=25Ω(note4,5) | 30 | ns | ||
| Rise time | tr | 90 | ns | |||
| Turn-off delay time | td(off) | 140 | ns | |||
| Fall time | tf | 90 | ns | |||
| Total gate charge | Qg | VDS=520V,ID=12.0A VGS=10V,(note4,5) | 52 | nC | ||
| Gate-source charge | Qgs | 8.5 | nC | |||
| Gate-drain charge | Qgd | 20 | nC | |||
| Drain-source diode forward voltage | VSD | VGS=0V,ISD=12.0A | 1.4 | V | ||
| Continuous drain-source current | ISD | 12.0 | A | |||
| Pulsed drain-source current | ISM | 48.0 | A | |||
| Reverse recovery time | trr | ISD=12.0A dlSD/dt=100A/μs (note4) | 430 | ns | ||
| Reverse recovery charge | Qrr | 5.0 | µC |
2411121006_KIA-Semicon-Tech-KIA12N65H_C135551.pdf
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