Fast Switching N Channel MOSFET KEXIN 2KK5018DFN with ESD Protected Gate in Compact DFN2X2 6L Package
Key Attributes
Model Number:
2KK5018DFN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@2.5V,5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
150pF@10V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
2KK5018DFN
Package:
DFN-6(2x2)
Product Description
Product Overview
The 2KK5018DFN is an N-Channel MOSFET in a DFN2X2-6L SMD package. It features a low gate threshold voltage, fast switching speed, and ESD-protected gate, making it suitable for various electronic applications.
Product Attributes
- Brand: Kexin
- Package Type: DFN2X2-6L
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-Source Voltage | VDS | 20 | V | |
| Gate-Source Voltage | VGS | ±10 | V | |
| Continuous Drain Current | ID | 12 | A | TA=25 |
| Pulsed Drain Current | IDM | 40 | A | |
| Power Dissipation | PD | 1.4 | W | TA=25 (Note 1) |
| Power Dissipation | PD | 0.9 | W | TA=70 (Note 1) |
| Thermal Resistance, Junction-to-Ambient | RθJA | 90 | °C/W | (Note 1) |
| Operating Junction Temperature | TJ | -55 to 150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | ID = 250 μA, VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS = 20 V, VGS = 0 V |
| Gate to Source Leakage Current | IGSS | ±10 | μA | VDS = 20 V, VGS = ±10 V |
| Gate to Source Threshold Voltage | VGS(th) | 0.4 - 1 | V | VDS = VGS , ID = 250μA |
| Static Drain-Source On-Resistance | RDS(On) | 15 - 30 | mΩ | VGS = 4.5V, ID = 5A |
| Static Drain-Source On-Resistance | RDS(On) | 18 | mΩ | VGS = 2.5V, ID = 5A |
| Input Capacitance | Ciss | 150 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz |
| Output Capacitance | Coss | 95 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | 25 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz |
| Total Gate Charge | Qg | 10 | nC | VGS = 5V, ID = 6.5A |
| Gate Source Charge | Qgs | 0.9 | nC | VGS = 5V, ID = 6.5A |
| Gate Drain Charge | Qgd | 3 | nC | VGS = 5V, ID = 6.5A |
| Turn-On Delay Time | td(on) | 250 | ns | VGS = 4.5V, ID = 5A, RL =1.5Ω, VDS = 10 V, RGEN = 3Ω (Note 2) |
| Turn-On Rise Time | tr | 420 | ns | VGS = 4.5V, ID = 5A, RL =1.5Ω, VDS = 10 V, RGEN = 3Ω (Note 2) |
| Turn-Off Delay Time | td(off) | 3950 | ns | VGS = 4.5V, ID = 5A, RL =1.5Ω, VDS = 10 V, RGEN = 3Ω (Note 2) |
| Turn-Off Fall Time | tf | 3700 | ns | VGS = 4.5V, ID = 5A, RL =1.5Ω, VDS = 10 V, RGEN = 3Ω (Note 2) |
| Diode Forward Voltage | VSD | 1 | V | VGS = 0 V, IS = 5 A (Note 2) |
2409300703_KEXIN-2KK5018DFN_C499623.pdf
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