SMD P Channel MOSFET KEXIN KO3409 Featuring 30V Drain Source Breakdown Voltage and Low On Resistance
Key Attributes
Model Number:
KO3409
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
130mΩ@10V,2.6A
Gate Threshold Voltage (Vgs(th)):
1.9V
Reverse Transfer Capacitance (Crss@Vds):
37.8pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
370pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
-
Mfr. Part #:
KO3409
Package:
SOT-23
Product Description
Product Overview
The AO3409 (KO3409) is a P-Channel Enhancement MOSFET designed for SMD applications. It features a VDS of -30V and a continuous drain current of -2.6A at VGS = -10V, with low on-resistance.
Product Attributes
- Brand: Kexin
- Origin: China
- Type: SMD Type MOSFET
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250µA, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250µA | -1 | -1.9 | -3 | V |
| Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-2.6A | 130 | mΩ | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-2.6A | 200 | mΩ | ||
| Continuous Drain Current | ID | TA=25°C | -2.6 | A | ||
| Continuous Drain Current | ID | TA=70°C | -2.2 | A | ||
| Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Power Dissipation | PD | TA=70°C | 1 | W | ||
| Themal Resistance. Junction-to-Ambient | RthJA | 125 | °C/W | |||
| Themal Resistance. Junction-to-Case | RthJC | 80 | °C/W | |||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | ||
| Forward Transconductance | gfs | VDS=-5V, ID=-2.6A | 8.3 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 302 | 370 | pF | |
| Output Capacitance | Coss | VGS=0V, VDS=-15V, f=1MHz | 50.3 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, f=1MHz | 37.8 | pF | ||
| Total Gate Charge | Qg | VGS=-10V | 6.8 | 9 | nC | |
| Total Gate Charge | Qg | VGS=-4.5V | 2.4 | nC | ||
| Source Gate Charge | Qgs | 1.6 | nC | |||
| Drain Gate Charge | Qgd | 0.95 | nC | |||
| Turn-On Delay Time | tD(on) | 7.5 | ns | |||
| Turn-On Rise Time | tR(on) | 3.2 | ns | |||
| Turn-Off Delay Time | tD(off) | 17 | ns | |||
| Turn-Off Fall Time | tF(off) | 6.8 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF=-2.6A, di/dt=100A/µs | 16.8 | 22 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-2.6A, di/dt=100A/µs | 10 | nC | ||
| Maximum Body-Diode Continuous Current | IS | -2 | A | |||
| Body-Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.8 | -1.2 | V |
2409302300_KEXIN-KO3409_C489376.pdf
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