Silicon Epitaxial Planar Transistor LangJie SS8050 with High Collector Current in SOT23 Package
Key Attributes
Model Number:
SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8050
Package:
SOT-23
Product Description
Product Overview
The SS8050 is a Silicon Epitaxial Planar Transistor designed for high collector current applications. It is complementary to the SS8550 and comes in a SOT-23 package.
Product Attributes
- Type No.: SS8050
- Marking: Y1
- Package Code: SOT-23
- Lead-free: Yes
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current - Continuous | IC | 1.5 | A | |||
| Collector Dissipation | PC | TC=25 | 300 | mW | ||
| Junction and Storage Temperature | Tj,Tstg | -55 | 150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=2mA,IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A,IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V,IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCE=20V,IB=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V,IC=0 | 0.1 | A | ||
| DC current gain | hFE | VCE=1V,IC=100mA | 120 | 400 | ||
| VCE=1V,IC=800mA | 40 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=800 mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800 mA, IB= 80mA | 1.2 | V | ||
| Base-emitter voltage | VBE | VCE=1V IC=10mA | 1 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA f=30MHz | 100 | MHz |
Package Information
| Device | Package | Shipping |
| SS8050 | SOT-23 | 3000/Tape&Reel |
2410121228_LangJie-SS8050_C18195379.pdf
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