Low Resistance N Channel MOSFET KEXIN SI2300 Suitable for SMD Power Switching and Electronic Circuits
Key Attributes
Model Number:
SI2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-
RDS(on):
55mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
-
Input Capacitance(Ciss):
887pF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
16.8nC@4.5V
Mfr. Part #:
SI2300
Package:
SOT-23
Product Description
Product Overview
The SI2300 (KI2300) is a N-Channel Enhancement MOSFET designed for SMD applications. It features a low Drain-Source On-Resistance (RDS(ON)) at various gate-source voltages and drain currents, making it suitable for power switching applications.
Product Attributes
- Brand: Kexin
- Origin: China (implied by www.kexin.com.cn)
- Type: SMD Type IC, SMD Type MOSFET
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDS | Drain-Source Voltage | 20 | V | ||
| VGS | Gate-Source Voltage | ±10 | V | |||
| ID | Continuous Drain Current (Ta = 25°C) | 5.0 | A | |||
| IDM | Pulsed Drain Current | 15 | P | |||
| PD | Power Dissipation (Ta = 25°C) | 1.25 | W | |||
| RthJA | Thermal Resistance, Junction-to-Ambient | 100 | ℃/W | |||
| Electrical Characteristics (Ta = 25°C) | VDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | 20 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=20V, VGS=0V) | 1 | µA | |||
| IGSS | Gate-Body Leakage Current (VGS=±10V, VDS=0V) | 100 | nA | |||
| On-State Resistance | RDS(ON) | (VGS=4.5V, ID=5.0A) | 20 | 25 | m℉ | |
| RDS(ON) | (VGS=2.5V, ID=4.0A) | 35 | m℉ | |||
| RDS(ON) | (VGS=1.8V, ID=1.0A) | 55 | m℉ | |||
| RDS(ON) | (VGS=4.5V, ID=5.0A) * Pulse Test | 20 | m℉ | |||
| Gate Threshold Voltage | VGS(th) | (VGS=VDS, ID=250µA) | 0.4 | 0.7 | 1.0 | V |
| VGS(th) | (VDS=5V, ID=1A) | 0.8 | V | |||
| Capacitance | Ciss | Input Capacitance | 887 | pF | ||
| Coss | Output Capacitance | 144 | pF | |||
| Crss | Reverse Transfer Capacitance | 115 | pF | |||
| Switching Times | tr | Turn-on Time | 31.8 | ns | ||
| tf | Turn-off Time | 14.5 | ns | |||
| td(on) | Delay on time | 31.8 | ns | |||
| td(off) | Delay off time | 50.3 | ns | |||
| Gate Charge | Qg | Total Gate Charge | 16.8 | nC | ||
| Qgs | Gate-Source Charge | 2.5 | nC | |||
| Qgd | Gate-Drain Charge | 5.4 | nC | |||
| Diode Characteristics | IS | Diode Forward Current (VGS=0V, IS=1.25A) | 1.25 | A | ||
| VSD | Diode Forward Voltage (VGS=0V, IS=1.25A) | 0.8 | 1.2 | V |
2409302300_KEXIN-SI2300_C382298.pdf
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