50A 60V N channel MOSFET KIA Semicon Tech KIA50N06BD ideal for UPS and power management applications
Key Attributes
Model Number:
KIA50N06BD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-
RDS(on):
12.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
375pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.06nF
Output Capacitance(Coss):
755pF
Pd - Power Dissipation:
88W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
KIA50N06BD
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The KIA SEMICONDUCTORS 50N06B is a 50A, 60V N-CHANNEL MOSFET designed for efficient power management. It features low on-resistance (RDS(on)) to minimize conductive losses and high avalanche current capability. This device is suitable for applications such as power supplies, UPS systems, and battery management systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 50N06B
- Device Type: N-CHANNEL MOSFET
- Lead Free/Green Device: Available
Technical Specifications
| Parameter | Symbol | Rating | Units | Notes |
| Absolute Maximum Ratings | VDSS | 60 | V | |
| VGSS | +25 | V | ||
| ID (TC=25C) | 50 | A | Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. | |
| ID (TC=100C) | 35 | A | Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. | |
| IDP (TC=25C) | 250 | A | Repetitive rating, pulse width limited by max junction temperature. | |
| IAS | 15 | A | Starting TJ=25,L=0.5mH,IAS=31A. | |
| Avalanche Energy | EAS | 120 | mJ | Starting TJ=25,L=0.5mH,IAS=31A. |
| PD (TC=25 C) | 88 | W | ||
| Power Dissipation | PD (TC=100C) | 44 | W | |
| Temperature Range | TJ,TSTG | -55-175 | ||
| Thermal Characteristics | RJA (To-252) | 100 | C/W | |
| RJA (To-220) | 62.5 | C/W | ||
| RJC (To-252) | 1.1 | C/W | ||
| RJC (To-220) | 1.7 | C/W | ||
| Electrical Characteristics | BVDSS | 60 | V | VGS=0V,IDS=250A |
| IDSS | 1 | A | VDS=48V, VGS=0V, TJ=125C: 20 A | |
| VGS(th) | 2.0-4.0 | V | VDS=VGS, ID=250A | |
| IGSS | +100 | nA | VGS=+25V, VDS=0V | |
| RDS(on)1 | 10.5-12.5 | m | VGS=10V,ID=30A, Pulse test; pulse width<300us duty cycle<2%. | |
| Rg | 1.0 | VDS=0V, VGS=0V,f=1MHz | ||
| VSD1 | 0.8-1.3 | V | ISD=30A, VGS=0V | |
| IS | 50 | A | Diode continuous forward current. Package limitation current is 50A. Calculated continuous current based on maximum allowable junction temperature. | |
| Diode Characteristics | trr | 32 | nS | IF=30A , dlSD/dt=100A/s |
| Qrr | 60 | nC | IF=30A , dlSD/dt=100A/s | |
| Ciss | 2060 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Coss | 755 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Crss | 375 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Switching Characteristics | td(on) | 14 | nS | VDD=30V, ID=30A, RG=5,VGS=10V |
| tr | 13 | nS | VDD=30V, ID=30A, RG=5,VGS=10V | |
| td(off) | 20 | nS | VDD=30V, ID=30A, RG=5,VGS=10V | |
| tf | 7.5 | nS | VDD=30V, ID=30A, RG=5,VGS=10V | |
| Qg | 50 | nC | VDS=48V, VGS=10V IDS=30A | |
| Qgs | 12 | -- | VDS=48V, VGS=10V IDS=30A | |
| Gate-Source Charge | Qgd | 17 | -- | VDS=48V, VGS=10V IDS=30A |
2409302333_KIA-Semicon-Tech-KIA50N06BD_C130980.pdf
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