General purpose NPN transistor KTP S8050 J3Y with 0.5 amp collector current and SOT-23 package type

Key Attributes
Model Number: S8050 J3Y
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
-
Type:
NPN
Number:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8050 J3Y
Package:
SOT-23
Product Description

Product Overview

The S8050 is an NPN transistor, complementary to the S8550. It is designed for general-purpose applications with a collector current capability of 0.5A. This transistor is supplied in a SOT-23 package.

Product Attributes

  • Brand: KTP Semiconductor
  • Marking: J3Y
  • Complementary to: S8550
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= 100A, IE=040V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA, IB=025V
Emitter-base breakdown voltageV(BR)EBOIE=100A, IC=05V
Collector cut-off currentICBOVCB=40 V , IE=00.1A
Collector cut-off currentICEOVCB=20V , I E=00.1A
Emitter cut-off currentIEBOVEB= 5V , IC=00.1A
DC current gainhFE(1)VCE=1V, I C= 50mA120400
DC current gainhFE(2)VCE=1V, I C= 500mA50
Collector-emitter saturation voltageVCE(sat)IC=500 mA, IB= 50mA0.6V
Base-emitter saturation voltageVBE(sat)IC=500 mA, IB= 50mA1.2V
Transition frequencyfTVCE=6V, I C= 20mA f=30MHz150MHz
Collector-Base VoltageVCBO40V
Collector-Emitter VoltageVCEO25V
Emitter-Base VoltageVEBO5V
Collector CurrentIC500mA
Collector Power DissipationPC300mW
Thermal Resistance Junction To AmbientRJA417/W
Junction TemperatureTj150
Storage TemperatureTstg-55+150

2412191542_KTP-S8050-J3Y_C42417222.pdf

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