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quality power MOSFET KIA Semicon Tech KNF12N65 650V N Channel device with high pulsed current and low switching losses factory
quality power MOSFET KIA Semicon Tech KNF12N65 650V N Channel device with high pulsed current and low switching losses factory
quality power MOSFET KIA Semicon Tech KNF12N65 650V N Channel device with high pulsed current and low switching losses factory
quality power MOSFET KIA Semicon Tech KNF12N65 650V N Channel device with high pulsed current and low switching losses factory

power MOSFET KIA Semicon Tech KNF12N65 650V N Channel device with high pulsed current and low switching losses

Key Attributes
Model Number: KNF12N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
600mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
30pF
Pd - Power Dissipation:
73W
Output Capacitance(Coss):
140pF
Input Capacitance(Ciss):
1.8nF
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
KNF12N65
Package:
TO-220F
Product Description

Product Overview

The 12N65 is a 650V N-Channel Planar MOSFET featuring an advanced planar process for enhanced performance. It offers a low on-resistance (RDS(ON)=0.6 typ. @VGS=10V), low gate charge to minimize switching loss, and a fast recovery body diode. This RoHS compliant MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.

Product Attributes

  • Brand: KMOS Semiconductor
  • Part Number: KNF12N65
  • Package: TO-220F
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250uA650--V
Continuous Drain CurrentID--12A
Pulsed Drain CurrentIDMVGS=10V--48A
Drain-to-Source ON ResistanceRDS(ON)VGS=10V, ID=6A-0.60.75
Gate Threshold VoltageVGS(TH)VDS=VGS,ID=250uA2.0-4.0V
Continuous Source CurrentISDIntegral PN-diode in MOSFET--12A
Pulsed Source CurrentISM--48A
Forward VoltageVSDIS=12A, VGS=0V--1.4V
Power DissipationPD--73W
Thermal Resistance, Junction-to-CaseRJC-1.71-C/W
Thermal Resistance, Junction-to-AmbientRJA-100-C/W
Operating and Storage Temperature RangeTJ&TSTG-55-150C
Gate-to-Source VoltageVGSS-30-V
Single Pulse Avalanche EnergyEAS-450-mJ
Drain-to-Source Leakage CurrentIDSSVDS=650V, VGS=0V--1uA
Gate-to-Source Leakage CurrentIGSSVGS=30V, VDS=0V--100nA
Input CapacitanceCissVGS=0V,VDS=25V, f=1.0MHZ-1800-pF
Reverse Transfer CapacitanceCoss-140-pF
Output CapacitanceCrss-30-pF
Total Gate ChargeQgVDD=480V,ID=12A, VGS=0 to 10V-50-nC
Reverse recovery timetrrIF=IS, VGS=0V di/dt=100A/us-420-ns
Reverse recovery chargeQrr-6.0-uC

2509041415_KIA-Semicon-Tech-KNF12N65_C51883054.pdf

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