30A 40V N Channel MOSFET KIA Semicon Tech KNG8104A with Low On Resistance and dv dt Capability
Key Attributes
Model Number:
KNG8104A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
96W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KNG8104A
Package:
DFN-8(3x3)
Product Description
Product Overview
The KIA SEMICONDUCTORS 8104A is a 30A, 40V N-CHANNEL MOSFET designed for efficient power management applications. It features very low on-resistance (RDS(ON) as low as 12m typ.), low Crss, and fast switching capabilities. This MOSFET is 100% avalanche tested and offers improved dv/dt capability, making it suitable for PWM applications and load switching.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Brand | Drain-source voltage (VDSS) | Continuous drain current (ID @ TC=25C) | Continuous drain current (ID @ TC=100C) | Gate-source voltage (VGS) | RDS(ON) @ VGS=10V | RDS(ON) @ VGS=4.5V | Power dissipation (PD @ TC=25C) | Operating junction temperature (TJ) |
| KNG8104A | DFN3*3 | KIA | 40 V | 30 A | 19 A | 20 V | 12 m (typ.) | 16.5 m (typ.) | 96 W | -55 to150 C |
| KNY8104A | DFN5*6 | KIA | 40 V | 30 A | 19 A | 20 V | 12 m (typ.) | 16.5 m (typ.) | 96 W | -55 to150 C |
| KND8104A | TO-252 | KIA | 40 V | 30 A | 19 A | 20 V | 12 m (typ.) | 16.5 m (typ.) | 96 W | -55 to150 C |
2411121110_KIA-Semicon-Tech-KNG8104A_C41369549.pdf
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