N Channel Power MOSFET KIA Semicon Tech KNF6180B for Switching in DC DC Converters and Motor Drivers
Key Attributes
Model Number:
KNF6180B
Product Custom Attributes
Drain To Source Voltage:
800V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6.4pF
Output Capacitance(Coss):
152pF
Pd - Power Dissipation:
62W
Input Capacitance(Ciss):
1.625nF
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
KNF6180B
Package:
TO-220F
Product Description
Product Overview
The KIA KNX6180B is an N-channel enhancement mode power MOS field effect transistor utilizing KIA's proprietary F-CellTM high-voltage planar VDMOS technology. This advanced process and cell structure are engineered to minimize on-state resistance, deliver superior switching performance, and ensure robustness against high energy pulses in avalanche and commutation modes. It is widely adopted in AC-DC power supplies, DC-DC converters, and H-bridge PWM motor drivers.
Product Attributes
- Brand: KIA
- Part Number: KNF6180B
- Package: TO-220F
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 800 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=800V, VGS=0V | - | - | 1 | uA |
| Gate-to-Source Leakage Current | IGSS | VGS=30V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250uA | 2.0 | - | 4.0 | V |
| Static Drain-to-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.0A | - | 0.87 | 1.05 | mΩ |
| Gate Resistance | Rg | F=1MHz | - | 16 | - | Ω |
| Input Capacitance | Ciss | VGS=0V, VDS=25V, F=1.0MHz | - | 1625 | - | pF |
| Output Capacitance | Coss | VGS=0V, VDS=25V, F=1.0MHz | - | 152 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V, F=1.0MHz | - | 6.4 | - | pF |
| Turn-on Delay Time | td(on) | VDD=400V, RG=25Ω, ID=10A | - | 28 | - | nS |
| Rise Time | tr | VDD=400V, RG=25Ω, ID=10A | - | 42 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=400V, RG=25Ω, ID=10A | - | 90 | - | nS |
| Fall Time | tf | VDD=400V, RG=25Ω, ID=10A | - | 75 | - | nS |
| Total Gate Charge | Qg | VDS=640V,VGS=10V, ID=10A | - | 32 | - | nC |
| Gate-to-Source Charge | Qgs | VDS=640V,VGS=10V, ID=10A | - | 8.5 | - | nC |
| Gate-to-Drain (Miller) Charge | Qg | VDS=640V,VGS=10V, ID=10A | - | 12 | - | nC |
| Continuous Source Current | IS | - | - | - | 10 | A |
| Pulsed Source Current | ISM | - | - | - | 40 | A |
| Diode Forward Voltage | VSD | IS=10A, VGS=0V | - | - | 1.4 | V |
| Reverse Recovery Time | trr | IS=10A,VGS=0V, dIF/dt=100A/us | - | 611 | - | ns |
| Reverse Recovery Charge | Qrr | IS=10A,VGS=0V, dIF/dt=100A/us | - | 5.6 | - | nC |
| Drain-Source Voltage | VDSS | - | 800 | - | - | V |
| Gate-Source Voltage | VGSS | - | ±30 | - | - | V |
| Continuous Drain Current | ID | TC=25°C | - | - | 10 | A |
| Continuous Drain Current | ID | TC=100°C | - | - | 6.32 | A |
| Pulsed Drain Current | IDM | VGS=10V | - | - | 40 | A |
| Power Dissipation | PD | TC=25°C | - | - | 62 | W |
| Derating Factor above 25°C | - | - | - | 0.5 | - | W/°C |
| Single Pulsed Avalanche Energy | EAS | L=30mH, IAS=7.5A, VDD=100V, RG=25Ω, starting TJ=25°C | - | 938 | - | mJ |
| Reverse Diode dv/dt | dv/dt | VDS=0~400V, ISD≤10A, TJ=25°C | - | 4.5 | - | V/ns |
| MOSFET dv/dt Ruggedness | dv/dt | VDS=0~480V | - | 50 | - | V/ns |
| Operation Junction Temperature Range | TJ | - | -55 | - | 150 | °C |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | °C |
| Thermal Resistance, Junction-to-Case | RθJC | - | - | 2.02 | - | °C/W |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 62.5 | - | °C/W |
2411121030_KIA-Semicon-Tech-KNF6180B_C20623382.pdf
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