N Channel Enhancement Mode MOSFET KIA Semicon Tech KND3403C for Industrial Power Management Devices
Key Attributes
Model Number:
KND3403C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
5mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
800mV
Reverse Transfer Capacitance (Crss@Vds):
1.1nF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.5nF@25V
Pd - Power Dissipation:
65W
Gate Charge(Qg):
38.9nC@10V
Mfr. Part #:
KND3403C
Package:
TO-252
Product Description
Product Overview
The KNX3403C is an N-channel enhancement mode power MOSFET utilizing KIA's LVMosfet technology. Engineered with an improved process and cell structure, it excels at minimizing on-state resistance and delivering superior switching performance. This device is widely adopted in UPS and Power Management for Inverter Systems.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX3403C
- Package: TO-252
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 30 | V | |||
| ID | Drain Current -Continuous | (TC = 25 C) | 80 | A | ||
| (TC = 100 C) | 57 | A | ||||
| IDM | Drain Current -Pulsed | 320 | A | |||
| VGSS | Gate-Source Voltage | ±20 | V | |||
| EAS | Single Pulsed Avalanche Energy (Note 1) | 110.25 | mJ | |||
| PD | Power Dissipation | (TC = 25 C) | 65 | W | ||
| -Derate above 25 C | 0.47 | W/C | ||||
| TJ,TSTG | Operating and Storage Temperature Range | -55 | +150 | C | ||
| Thermal Characteristics | ||||||
| R㉅JC | Thermal Resistance, Junction-to-Case | 0.52 | C /W | |||
| R㉅JA | Thermal Resistance, Junction-to-Ambient | 62 | C /W | |||
| Electrical Characteristics (TC= 25C , unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0 V, ID = 250 uA | 30 | -- | -- | V |
| IDSS | Drain-Source Leakage Current | VDS = 30 V, VGS = 0 V | -- | 1 | uA | |
| IGSS | Gate- Source Leakage Current | VGS = ±20 V, VDS = 0 V | -- | ±100 | nA | |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250 uA | 0.8 | 1.3 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10 V, ID = 20 A | 5.0 | 6.2 | mΩ | |
| VGS = 4.5V, ID = 10 A | 7.5 | 9.0 | mΩ | |||
| RG | Gate Resistance | f = 1.0 MHz VDS =0 V, VGS = 0 V, | 1.5 | Ω | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25 V, VGS = 0 V, f = 1.0 MHz | 2500 | pF | ||
| Coss | Output Capacitance | 1250 | pF | |||
| Crss | Reverse Transfer Capacitance | 1100 | pF | |||
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD =15 V,VGS=4.5V, ID = 1 A, RG =3Ω (Note2.3) | 7 | ns | ||
| tr | Turn-On Rise Time | 3.6 | ns | |||
| td(off) | Turn-Off Delay Time | 36.8 | ns | |||
| tf | Turn-Off Fall Time | 22.5 | ns | |||
| QG | Total Gate Charge | VDS=25V,ID=14A , VGS=10V(Note 2,3) | 38.9 | nC | ||
| QGS | Gate-Source Charge | 4.48 | nC | |||
| QGD | Gate-Drain Charge | 10.78 | nC | |||
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Continuous Source Current | Integral Reverse P-N Junction Diode in the MOSFET | 80 | A | ||
| ISM | Pulsed Source Current | 320 | A | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0 V, IS =20 A | 1.4 | V | ||
| trr | Reverse Recovery Time | VGS = 0 V, IS = 20 A, dIF / dt = 100 A/us (Note 2) | 12.8 | ns | ||
| Qrr | Reverse Recovery Charge | 3.3 | nC | |||
2410122022_KIA-Semicon-Tech-KND3403C_C5156063.pdf
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