Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode
Product Overview
The MJD122 is a medium power NPN Darlington transistor designed for linear switching applications. It offers high DC current gain and features a built-in damper diode between the collector and emitter for enhanced protection. This device is electrically similar to the popular TIP122 and is complementary to the MJD127.
Product Attributes
- Brand: Yongyutai
- Model: MJD122
- Type: Darlington Transistor
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Collector-base voltage | BVCBO | IC = 10mAIE = 0 | 100 | V | ||
| Collector-emitter voltage | BVCEO | IC = 30mAIB = 0 | 100 | V | ||
| Emitter-base voltage | BVEBO | IE = 30mAIC = 0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB = 100VIE = 0 | 10 | A | ||
| Collector cut-off current | ICEO | VCE = 50VIE = 0 | 10 | A | ||
| Emitter cut-off current | IEBO | VEB = 5VIC = 0 | 2 | mA | ||
| DC current gain | hFE | VCE= 4VIC= 4A | 1000 | |||
| DC current gain | hFE | VCE= 4VIC= 8A | 500 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC =4AIB = 16mA | 2 | V | ||
| Collector-emitter saturation voltage | VCE(sat) | IC =8AIB = 80mA | 4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC =8AIB = 80mA | 4.5 | V | ||
| Base-emitter on voltage | VBE (on) | VCE= 4VIC= 4A | 2.8 | V | ||
| Output capacitance | Cob | VCB= 10Vf=1MHz | 200 | pF | ||
| Collector-base voltage | BVCBO | 100 | V | |||
| Collector-emitter voltage | BVCEO | 100 | V | |||
| Emitter-base voltage | BVEBO | 5 | V | |||
| Collector current (DC) | IC | 8 | A | |||
| Collector current (Pluse) | ICP | 8 | A | |||
| Collector dissipation power | PC | TA =25 | 1.75 | W | ||
| Collector dissipation power | PC | TC =25 | 20 | W | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2505071457_KUU-MJD122_C48686204.pdf
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