Medium power NPN Darlington transistor KUU MJD122 with high DC current gain and built in damper diode

Key Attributes
Model Number: MJD122
Product Custom Attributes
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
20W
Current - Collector(Ic):
8A
Collector - Emitter Voltage VCEO:
100V
Mfr. Part #:
MJD122
Package:
TO-252
Product Description

Product Overview

The MJD122 is a medium power NPN Darlington transistor designed for linear switching applications. It offers high DC current gain and features a built-in damper diode between the collector and emitter for enhanced protection. This device is electrically similar to the popular TIP122 and is complementary to the MJD127.

Product Attributes

  • Brand: Yongyutai
  • Model: MJD122
  • Type: Darlington Transistor

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-base voltageBVCBOIC = 10mAIE = 0100V
Collector-emitter voltageBVCEOIC = 30mAIB = 0100V
Emitter-base voltageBVEBOIE = 30mAIC = 05V
Collector cut-off currentICBOVCB = 100VIE = 010A
Collector cut-off currentICEOVCE = 50VIE = 010A
Emitter cut-off currentIEBOVEB = 5VIC = 02mA
DC current gainhFEVCE= 4VIC= 4A1000
DC current gainhFEVCE= 4VIC= 8A500
Collector-emitter saturation voltageVCE(sat)IC =4AIB = 16mA2V
Collector-emitter saturation voltageVCE(sat)IC =8AIB = 80mA4V
Base-emitter saturation voltageVBE(sat)IC =8AIB = 80mA4.5V
Base-emitter on voltageVBE (on)VCE= 4VIC= 4A2.8V
Output capacitanceCobVCB= 10Vf=1MHz200pF
Collector-base voltageBVCBO100V
Collector-emitter voltageBVCEO100V
Emitter-base voltageBVEBO5V
Collector current (DC)IC8A
Collector current (Pluse)ICP8A
Collector dissipation powerPCTA =25 1.75W
Collector dissipation powerPCTC =25 20W
Junction TemperatureTj150
Storage TemperatureTstg-55150

2505071457_KUU-MJD122_C48686204.pdf

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