High energy pulse withstand MOSFET KIA Semicon Tech KNY3303A ideal for half bridge topology circuits
Key Attributes
Model Number:
KNY3303A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
315pF
Number:
1 N-channel
Output Capacitance(Coss):
400pF
Input Capacitance(Ciss):
3.07nF
Pd - Power Dissipation:
69W
Gate Charge(Qg):
24nC@4.5V
Mfr. Part #:
KNY3303A
Package:
PDFN-8(5.8x4.9)
Product Description
Product Overview
This N-CHANNEL MOSFET, the KNX3303A from KIA SEMICONDUCTOR, is manufactured using advanced planar stripe DMOS technology. It is engineered for minimal on-state resistance, superior switching performance, and high energy pulse withstand capability in avalanche and commutation modes. This device is ideal for high efficiency switched mode power supplies and active power factor correction circuits utilizing half-bridge topology.
Product Attributes
- Brand: KIA SEMICONDUCTOR
- Origin: KIA
- Type: N-CHANNEL MOSFET
- Model: KNX3303A
- Availability: Green device available
Technical Specifications
| Parameter | Symbol | DFN3*3 | DFN5*6 | Units | Notes | |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDSS | 30 | 30 | V | ||
| Gate-source voltage | VGSS | +20 | V | |||
| Continuous drain current | ID | 90* | 90* | A | TC=25C, limited by max junction temperature | |
| 57* | 57* | A | TC=100C, limited by max junction temperature | |||
| Pulse drain current | IDP | 360* | A | TC=25C, pulse width limited by max junction temperature | ||
| Avalanche current | IAS | 50 | A | Note 2 | ||
| Avalanche energy | EAS | 125 | mJ | Note 2 | ||
| Maximum power dissipation | PD | 43.4 | 69 | W | TC=25 C | |
| Derate above 25 C | 0.35 | 0.55 | W/ | |||
| Junction & storage temperature range | TJ,TSTG | -55-150 | ||||
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-ambient | RJA | 95 | 62 | C/W | ||
| Thermal resistance, Junction-case | RJC | 2.88 | 1.81 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V,IDS=250A | ||
| BVDSS temperature coefficient | BVDSS /TJ | 0.03 | V/C | Reference to 25C, ID=1mA | ||
| Zero gate voltage drain current | IDSS | 1 | A | VDS=30V, VGS=0V, TJ=25C | ||
| 10 | A | VDS=24V, VGS=0V, TJ=125C | ||||
| Gate threshold voltage | VGS(th) | 1.2 - 2.5 | V | VDS=VGS, ID=250A | ||
| 1.6 | V | Typ. | ||||
| VGS(th) temperature coefficient | VGS(th) | -5 | mV/C | VDS=VGS, ID=250A | ||
| Gate leakage current | IGSS | +100 | nA | VGS=+20V, VDS=0V | ||
| Drain-source on-resistance | RDS(on) | 3.1 - 4 | m | VGS=10V,ID=24A, Note 3 | ||
| 4.5 - 6 | m | VGS=4.5V,ID=12A, Note 3 | ||||
| Forward transconductance | gfs | 15.5 | S | VDS=10V,ID=10A | ||
| Gate resistance | Rg | 2 - 4 | VDS=0V, VGS=0V,f=1MHz | |||
| Input capacitance | Ciss | 3070 | pF | VDS=15V,VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 400 | pF | |||
| Reverse transfer capacitance | Crss | 315 | pF | |||
| Turn-on delay time | td(on) | 12.6 | nS | VDD=15V, ID=15A, RG=3.3,VGS=10V, Note 3,4 | ||
| Rise time | tr | 19.5 | nS | Note 3,4 | ||
| Turn-off delay time | td(off) | 42.8 | nS | Note 3,4 | ||
| Fall time | tf | 13.2 | nS | Note 3,4 | ||
| Total gate charge | Qg | 24 | nC | VDS=15V, VGS=4.5V IDS=24A, Note 3,4 | ||
| Gate-source charge | Qgs | 4.2 | nC | Note 3,4 | ||
| Gate-drain charge | Qgd | 13 | nC | Note 3,4 | ||
| Single pulse avalanche energy | EAS | 31 | mJ | VDD=25V,L=0.1mH,IAS=24A | ||
| Continuous source current | IS | 90 | A | VGS=VDS=0V,force current | ||
| Pulsed source current | ISM | 360 | A | Note 3 | ||
| Diode forward voltage | VSD | 1 | V | VGS=0V,IS=1A,TJ=25C, Note 3 | ||
| Reverse recovery time | trr | - | nS | VDS=30V,IS=1A, di/dt=100A/s | ||
| Reverse recovery charge | Qrr | - | nC | |||
2410010001_KIA-Semicon-Tech-KNY3303A_C382144.pdf
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