N Channel Logic Level Enhancement Mode Power MOSFET KIA Semicon Tech KND3080 80A 30V with Low RDS
Key Attributes
Model Number:
KND3080
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
80A
RDS(on):
4.3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
170pF
Pd - Power Dissipation:
53W
Input Capacitance(Ciss):
1.5nF
Output Capacitance(Coss):
188pF
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
KND3080
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KND3080 is an 80A, 30V N-Channel Logic Level Enhancement Mode Power MOSFET. It features low RDS(ON) of 4.3m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, with a green device available. It is suitable for applications requiring high current and low on-resistance.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KND3080
- Package: TO-252
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| VDS=24V, VGS=0V, TC=25C | - | - | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 4.3 | 5.0 | m |
| VGS=4.5V, ID=20A | - | 6.5 | 8 | m | ||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 1500 | - | pF |
| Output Capacitance | Coss | - | - | 188 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 170 | - | pF |
| Total Gate Charge | Qg | VDS=15V, VGS=10V , ID=15A | - | 25 | - | nC |
| Source-Drain Current (Body Diode) | ISD | 1),5) | - | - | 80 | A |
| Diode Forward Voltage | VSD | VGS=0V, ISD=5A 2) | - | - | 1.2 | V |
| Parameter | Symbol | Ratings | Unit |
| Drain-to-Source Voltage | VDS | 30 | V |
| Gate-to-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | 80 (TC=25C) / 48 (TC=100C) | A |
| Pulsed Drain Current | IDM | 320 | A |
| Total Power Dissipation | PD | 53 (TC=25C) | W |
| Avalanche Energy | EAS | 169 | mJ |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C |
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 2.35 | C/W |
2507111630_KIA-Semicon-Tech-KND3080_C49328624.pdf
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