P Channel MOSFET with 3.5A Drain Current and 20V Voltage KIA Semicon Tech KIA2305 Semiconductor Device
Key Attributes
Model Number:
KIA2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.5A
Operating Temperature -:
-
RDS(on):
95mΩ@1.8V,2A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
210pF
Number:
1 P-Channel
Output Capacitance(Coss):
375pF
Input Capacitance(Ciss):
1.245nF
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
15nC@4.5V
Mfr. Part #:
KIA2305
Package:
SOT-23
Product Description
P-CHANNEL MOSFET -3.5A, -20V
This P-Channel MOSFET from KIA SEMICONDUCTORS is designed for various applications requiring a -20V drain-source voltage and a continuous drain current of -3.5A. It offers low on-resistance at different gate-source voltages, making it suitable for switching and amplification circuits.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 2305
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=-10A | -20 | - | - | V |
| Gate threshold voltage* | VGS(th) | VDS=VGS, ID=-250A | -0.45 | - | -1.0 | V |
| Gate-body leakage | IGSS | VGS=+12V, VDS=0V | - | - | +100 | nA |
| Zero gate voltage drain current | IDSS | VDS=-16V, VGS=0V | - | - | -50 | nA |
| On-state drain current | ID(on) | VDS<-5V, VGS=-4.5V | -6 | - | - | A |
| On-state drain current | ID(on) | VDS<-5V, VGS=-2.5V | -3 | - | - | A |
| Static drain-source on-resistance | RDS(on) | VGS=-4.5V,ID=-3.5A | - | 0.045 | 0.055 | |
| Static drain-source on-resistance | RDS(on) | VGS=-2.5V,ID=-3.0A | - | 0.06 | 0.075 | |
| Static drain-source on-resistance | RDS(on) | VGS=-1.8V,ID=-2.0A | - | 0.09 | 0.095 | |
| Forward transconductance | gfs | VDS=-5V, ID=-3.5A | - | 8.5 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=-1.6A | - | - | -1.28 | V |
| Total gate charge | Qg | VDS=-4.0V, VGS=-4.5V ID=-3.5A | - | 10 | 15 | nC |
| Gate-source charge | Qgs | - | - | 2 | - | - |
| Gate-drain charge | Qgd | - | - | 2 | - | - |
| Input capacitance | Ciss | VDS=-4V,VGS=0V, f=1MHz | - | 1245 | - | pF |
| Output capacitance | Coss | - | - | 375 | - | - |
| Reverse transfer capacitance | Crss | - | - | 210 | - | - |
| Turn-on delay time | td(on) | VDD=-4V, ID =-1.0A, RL=4, RG=6, VGEN=-4.5V | - | 13 | 20 | ns |
| Rise time | tr | - | - | 25 | 40 | - |
| Turn-off delay time | td(off) | - | - | 55 | 80 | - |
| Fall time | tf | - | - | 19 | 35 | - |
2410010000_KIA-Semicon-Tech-KIA2305_C116007.pdf
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