120A 40V N Channel Power MOSFET KIA Semicon Tech KNY3004B with Low RDS ON and Super Low Gate Charge
Key Attributes
Model Number:
KNY3004B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V
Reverse Transfer Capacitance (Crss@Vds):
350pF
Pd - Power Dissipation:
88.2W
Output Capacitance(Coss):
415pF
Input Capacitance(Ciss):
5.02nF
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
KNY3004B
Package:
DFN-8(5x6)
Product Description
120A, 40V N-Channel Power MOSFET - KNY3004B
This N-Channel Power MOSFET, model KNY3004B, is designed for power management applications. It features advanced trench technology for high performance and efficiency, with a low RDS(ON) of 2.4m (typ.) at VGS=10V and super low gate charge. The device offers excellent CdV/dt effect decline and is 100% Vds and UIS tested, ensuring reliability. It is available in a Green Device option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNY3004B
- Package: DFN5*6
- Origin: KMOS Semiconductor
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=-250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 2.4 | 3.2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 3.0 | 4.2 | m |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1.0MHz | - | 1.4 | - | |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1.0MHz | - | 5020 | - | pF |
| Output Capacitance | Coss | VDS=20V , VGS=0V , f=1.0MHz | - | 415 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V , VGS=0V , f=1.0MHz | - | 350 | - | pF |
| Turn-On Delay Time | td(on) | VDS=20V,VGS=10V, RG=2.0,ID=30A | - | 13 | - | ns |
| Rise Time | tr | VDS=20V,VGS=10V, RG=2.0,ID=30A | - | 15 | - | ns |
| Turn-Off Delay Time | td(off) | VDS=20V,VGS=10V, RG=2.0,ID=30A | - | 48 | - | ns |
| Fall Time | tf | VDS=20V,VGS=10V, RG=2.0,ID=30A | - | 20 | - | ns |
| Total Gate Charge | Qg | VDS=20V, VGS=10V , ID=30A | - | 110 | - | nC |
| Gate-Source Charge | Qgs | VDS=20V, VGS=10V , ID=30A | - | 8.2 | - | nC |
| Gate-Drain Charge | Qgd | VDS=20V, VGS=10V , ID=30A | - | 26 | - | nC |
| Source-Drain Current (Body Diode) | ISD | - | - | 120 | A | |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 42 | - | nS |
| Reverse Recovery Charge | Qrr | TJ=25C, IF=30A, di/dt=100A/s | - | 46 | - | nC |
| Continuous Drain Current | ID | TC=25C | - | - | 120 | A |
| Continuous Drain Current | ID | TC=100C | - | - | 77 | A |
| Pulsed Drain Current | IDM | @ Current-Pulsed | - | - | 480 | A |
| Total Power Dissipation | PD | (TC=25C) | - | - | 88.2 | W |
| Avalanche Energy | EAS | - | - | 361 | mJ | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 1.7 | C/W |
2507111630_KIA-Semicon-Tech-KNY3004B_C49328623.pdf
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