Schottky Barrier Rectifier LangJie SS34 40 Volt 3 Ampere Surface Mount Metal Silicon Junction
Key Attributes
Model Number:
SS34
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@40V
Non-Repetitive Peak Forward Surge Current:
80A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS34
Package:
DO-214AC(SMA)
Product Description
Product Overview
The SS32 thru SS320 series are surface mount Schottky barrier rectifiers designed for high-efficiency, low-power loss applications. Featuring a metal silicon junction for majority carrier conduction, these rectifiers offer built-in strain relief for automated placement and high forward surge current capability. They are ideal for surface mounted applications and are rated for a voltage range of 20 to 200 Volts with a current of 3.0 Amperes.
Product Attributes
- Brand: CHANGZHOU LANGJIE ELECTRONICS CO.,LTD
- Origin: CHANGZHOU LANGJIE ELECTRONICS CO.,LTD
- Certifications: Underwriters Laboratory Flammability Classification 94V-0
- Material: Metal silicon junction
- Color: Color band denotes cathode end
Technical Specifications
| Type | VRRM (Volts) | VRMS (Volts) | VDC (Volts) | I(AV) @ TL=100 (Amps) | IFSM (Amps) | VF @ 3.0A (Volts) | IR @ TA=25 (mA) | IR @ TA=100 (mA) | RJA (/W) | RJL (/W) | CJ (pF) |
| SS32 | 20 | 14 | 20 | 3.0 | 80 | 0.55 | 0.1 | 20.0 | 55 | 25 | 300 |
| SS34 | 40 | 28 | 40 | 0.70 | 0.1 | 20.0 | 55 | 25 | 300 | ||
| SS35 | 50 | 35 | 50 | 0.85 | 0.1 | 20.0 | 55 | 25 | 300 | ||
| SS36 | 60 | 42 | 60 | 0.85 | 0.1 | 20.0 | 55 | 25 | 300 | ||
| SS38 | 80 | 56 | 80 | 0.90 | 0.1 | 20.0 | 55 | 25 | 300 | ||
| SS310 | 100 | 70 | 100 | 0.90 | 0.1 | 20.0 | 55 | 25 | 300 | ||
| SS315 | 150 | 105 | 150 | 0.90 | 0.1 | 10.0 | 55 | 25 | 200 | ||
| SS320 | 200 | 140 | 200 | 0.90 | 0.1 | 10.0 | 55 | 25 | 200 |
2410121621_LangJie-SS34_C7450457.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
