N Channel MOSFET KIA Semicon Tech KND3903A 85A 30V with Improved dv dt Capability and Fast Switching
Key Attributes
Model Number:
KND3903A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.6mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
240pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.705nF@15V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
KND3903A
Package:
TO-252
Product Description
Product Overview
The KND3903A is an 85A, 30V N-Channel MOSFET from KIA SEMICONDUCTORS. It features very low on-resistance (RDS(ON)=3.6m typ. @VGS=10V), low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability. This MOSFET is suitable for PWM applications, load switches, and power management.
Product Attributes
- Brand: KIA
- Part Number: KND3903A
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-source voltage | VDSS | 30 | V | |
| Continuous drain current | ID | 85 | A | TC=25C* |
| Continuous drain current | ID | 55 | A | TC=100C* |
| Pulsed drain current | IDM | 360 | A | -Pulsed |
| Gate-source voltage | VGS | 20 | V | |
| Single pulse avalanche energy | EAS | 90 | mJ | TJ=25C, VDD=15V, VG=10V, RG=25, L=0.5mH, IAS=19A |
| Power dissipation | PD | 90 | W | TC=25C |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to175 | C | |
| Maximum lead temperature for soldering purposes | TL | 300 | C | 1/8" from case for 5 seconds |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V |
| Drain-source leakage current | IDSS | 10 | uA | VDS=24V, TC=125C |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.5 | V | VDS=VGS,ID=250uA (Typ: 1.5V) |
| Drain-source on-resistance | RDS(on) | 3.6 - 5.0 | m | VGS=10V,ID=30A (Typ: 3.6m) |
| Drain-source on-resistance | RDS(on) | 5.2 - 7.0 | m | VGS=4.5V,ID=20A (Typ: 5.2m) |
| Input capacitance | Ciss | 2705 | pF | VDS=15V,VGS=0V f=1MHz |
| Output capacitance | Coss | 322 | pF | VDS=15V,VGS=0V f=1MHz |
| Reverse transfer capacitance | Crss | 240 | pF | VDS=15V,VGS=0V f=1MHz |
| Turn-on delay time | td(on) | 12 | ns | VGS=10V, VDS=15V RL=3, ID=30A |
| Rise time | tr | 35 | ns | VGS=10V, VDS=15V RL=3, ID=30A |
| Turn-off delay time | td(off) | 42 | ns | VGS=10V, VDS=15V RL=3, ID=30A |
| Fall time | tf | 15 | ns | VGS=10V, VDS=15V RL=3, ID=30A |
| Total gate charge | Qg | 40 | nC | VDS=15V, ID=30A VGS=10V |
| Gate-source charge | Qgs | 4 | nC | VDS=15V, ID=30A VGS=10V |
| Gate-drain charge | Qgd | 12 | nC | VDS=15V, ID=30A VGS=10V |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 90 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 360 | A | |
| Diode forward voltage | VSD | 1.2 | V | ISD=30A,VGS=0V, TJ=25C |
| Reverse recovery time | Trr | 16 | ns | IF=20A dl/dt=100A/s |
| Reverse recovery charge | Qrr | 5 | nC | IF=20A dlF/dt=100A//s |
2410121238_KIA-Semicon-Tech-KND3903A_C7465101.pdf
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