Power MOSFET KIA Semicon Tech KND4360A N Channel 600V 4A Current for Switching Circuits
Key Attributes
Model Number:
KND4360A
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
2.7Ω@10V,2.0A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
500pF
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
93W
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
KND4360A
Package:
TO-252-2(DPAK)
Product Description
Product Overview
The KIA4N60H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It offers high ruggedness, fast switching capability, and improved dv/dt capability, making it suitable for switching regulators, switching converters, solenoid drivers, motor drivers, and relay drivers.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 4N60H
- Type: N-CHANNEL MOSFET
- Voltage Rating: 600V
- Current Rating: 4.0A
Technical Specifications
| Parameter | Symbol | TO220/TO262/TO220F | TO251/TO252 | Units |
| Drain-source voltage | VDSS | 600 | 600 | V |
| Gate-source voltage | VGSS | 30 | 30 | V |
| Drain current continuous (TC=25C) | ID | 4.0 | 2.8 | A |
| Drain current continuous (TC=100C) | ID | 2.4 | 1.8 | A |
| Drain current pulsed (note1) | IDM | 16 | 12 | A |
| Avalanche energy Repetitive (note1) | EAR | 9.3 | 5.5 | mJ |
| Avalanche energy Single pulse (note2) | EAS | 180 | - | mJ |
| Peak diode recovery dv/dt (note3) | dv/dt | 4.5 | - | V/ns |
| Total power dissipation (TC=25C) | PD | 93 | 55 | W |
| Derate above 25C | - | 0.74 | 0.44 | W/C |
| Junction temperature | TJ | +150 | +150 | C |
| Storage temperature | TSTG | -55~+150 | -55~+150 | C |
| Thermal resistance,junction-ambient | RthJA | 62.5 | 110 | C/W |
| Thermal resistance,case-to-sink typ | RthJS | 0.5 | 50 | - |
| Thermal resistance junction-case | RthJC | 1.35 | 2.25 | C/W |
| Drain-source breakdown voltage | BVDSS | 600 | 600 | V |
| Zero gate voltage drain current (VDS=600V,VGS=0V) | IDSS | 1 | 1 | A |
| Gate-body leakage current (VGS=30V,VDS=0V) | IGSS | 100 | 100 | nA |
| Gate threshold voltage | VGS(TH) | 2.0~4.0 | 2.0~4.0 | V |
| Static drain-source on-resistance | RDS(ON) | 2.3~2.7 | 2.3~2.7 | |
| Input capacitance | CISS | 500 | 500 | pF |
| Output capacitance | COSS | 45 | 45 | pF |
| Reverse transfer capacitance | CRSS | 4.5 | 4.5 | pF |
| Turn-on delay time | tD(ON) | 10 | 10 | ns |
| Rise time | tR | 32 | 32 | ns |
| Turn-off delay time | tD(OFF) | 32 | 32 | ns |
| Fall time | tF | 40 | 40 | ns |
| Total gate charge | QG | 13.5 | 13.5 | nC |
| Gate-source charge | QGS | 2.2 | 2.2 | nC |
| Gate-drain charge | QGD | 5.4 | 5.4 | nC |
| Drain-source diode forward voltage | VSD | 1.4 | 1.4 | V |
| Continuous drain-source current (diode) | ISD | 4.0 | 2.8 | A |
| Pulsed drain-source current (diode) | ISM | 16.0 | 12.0 | A |
| Reverse recovery time | tRR | 250 | 250 | ns |
| Reverse recovery charge | QRR | 1.8 | 1.8 | C |
2411121021_KIA-Semicon-Tech-KND4360A_C176869.pdf
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