Power MOSFET KIA Semicon Tech KND3306C 80A 68V N Channel Low On Resistance for PWM Applications
Key Attributes
Model Number:
KND3306C
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
210pF
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
5.85nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
92.6nC@10V
Mfr. Part #:
KND3306C
Package:
TO-252
Product Description
Product Overview
This 80A, 68V N-CHANNEL MOSFET from KIA SEMICONDUCTORS offers very low on-resistance (RDS(ON)=6.5m typ. @VGS=10V), low Crss, fast switching, and 100% avalanche tested with improved dv/dt capability. It is ideal for PWM applications, power management, and load switching.
Product Attributes
- Brand: KIA
- Part Number: KND3306C (TO-252), KNB3306C (TO-263)
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-source voltage | VDSS | 68 | V | |
| Continuous drain current | ID | 80 | A | TC=25C |
| Continuous drain current | ID | 52 | A | TC=100C |
| Pulsed drain current | IDM | 320 | A | Pulsed 1) |
| Gate-source voltage | VGS | 25 | V | |
| Single pulse avalanche energy | EAS | 260 | mJ | 2) |
| Power dissipation | PD | 125 | W | TC=25C |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Maximum lead temperature for soldering | TL | 300 | C | 1/8" from case for 5 seconds |
| Drain-source breakdown voltage | BVDSS | 68 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=68V, VGS=0V |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(TH) | 2.0 - 4.0 | V | VDS=VGS,ID=250uA |
| Drain-source on-resistance | RDS(on) | 6.5 - 8.5 | m | VGS=10V,ID=20A |
| Input capacitance | Ciss | 5850 | pF | VDS=35V,VGS=0V f=1MHz |
| Output capacitance | Coss | 230 | pF | VDS=35V,VGS=0V f=1MHz |
| Reverse transfer capacitance | Crss | 210 | pF | VDS=35V,VGS=0V f=1MHz |
| Turn-on delay time | td(on) | 25 | ns | VGS=10V,VDS=35V, RL=3, ID=40A, TJ=25C 3) |
| Rise time | tr | 24 | ns | VGS=10V,VDS=35V, RL=3, ID=40A, TJ=25C 3) |
| Turn-off delay time | td(off) | 48 | ns | VGS=10V,VDS=35V, RL=3, ID=40A, TJ=25C 3) |
| Fall time | tf | 10 | ns | VGS=10V,VDS=35V, RL=3, ID=40A, TJ=25C 3) |
| Total gate charge | Qg | 92.6 | nC | VDS=60V, ID=40A VGS=10V 3) |
| Gate-source charge | Qgs | 23 | nC | VDS=60V, ID=40A VGS=10V 3) |
| Gate-drain charge | Qgd | 37 | nC | VDS=60V, ID=40A VGS=10V 3) |
| Gate Resistance | RG | 3.3 | f=1MHz | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 80 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 320 | A | |
| Diode forward voltage | VSD | 1.2 | V | ISD=20A,VGS=0V, TJ=25C |
2508261745_KIA-Semicon-Tech-KND3306C_C7465108.pdf
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