45V N CHANNEL MOSFET KIA Semicon Tech KCB2904A 130A with easy parallel operation and high reliability
Key Attributes
Model Number:
KCB2904A
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
110pF
Output Capacitance(Coss):
1.38nF
Input Capacitance(Ciss):
4.195nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KCB2904A
Package:
TO-263
Product Description
Product Overview
This 130A, 45V N-CHANNEL SGT MOSFET utilizes advanced SGT technology to provide high robustness, reliability, and increased maximum current capability. It offers low power loss, high power density, and is easy to parallel. Ideal for synchronous rectification in AC/DC quick chargers, battery management, and uninterruptible power supplies.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model: 2904A
Technical Specifications
| Parameter | Symbol | Test Condition | Value (typ.) | Value (max.) | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250uA | - | 45 | V |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=250uA | 2 | 4 | V |
| Zero gate voltage drain current | IDSS | VDS=45V,VGS=0V,Tj=25C | 0.05 | 1 | uA |
| Gate-source leakage current | IGSS | VGS=20V,VDS=0V | - | 100 | nA |
| Drain-source on-state resistance | RDS(on) | VGS=10V,ID=20A | 2.0 | 2.6 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=20V, f=1MHz | 4195 | - | pF |
| Output Capacitance | Coss | - | 1380 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 110 | - | pF |
| Gate Total Charge | QG | VDS=20V,ID=50A, VGS=10V | 60 | - | nC |
| Body Diode Forward Voltage | VSD | VGS=0V,ISD=20A | 0.78 | 1.2 | V |
| Junction-to-Case Thermal Resistance | RJC | - | 1.0 | - | C/W |
| Junction-to-Ambient Thermal Resistance | RJA | - | 81 | - | C/W |
| Continuous drain current (Silicon limit) | ID | TC=25C | - | 130 | A |
| Continuous drain current (Package limit) | ID | TC=25C | - | 300 | A |
| Continuous drain current (Silicon limit) | ID | TC=100C | - | 137 | A |
| Continuous drain current (Silicon limit) | ID | Ta=25C | - | 24 | A |
| Pulsed drain current | ID pulse | TC=25C, tp=100uS | - | 865 | A |
| Avalanche energy, single pulse | EAS | L=0.5Mh, Vds=32V | - | 200 | mJ |
| Gate-Source voltage | VGS | - | - | 20 | V |
| Power dissipation | Ptot | TC=25C | - | 125 | W |
| Power dissipation | Ptot | Ta=25C | - | 1.5 | W |
| Operating junction and storage temperature | Tj , Tstg | - | -55 | +150 | C |
| Soldering temperature | Tsold | wave soldering only allowed at leads (1.6mm from case for 10s) | - | 260 | C |
2508261745_KIA-Semicon-Tech-KCB2904A_C7465104.pdf
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