Power Switching N Channel MOSFET KIA Semicon Tech KNB2908B Suitable for High Frequency Circuits and UPS
Key Attributes
Model Number:
KNB2908B
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
380pF
Number:
-
Output Capacitance(Coss):
460pF
Pd - Power Dissipation:
245W
Input Capacitance(Ciss):
7.95nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
KNB2908B
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX2908B and KNP2908B are N-channel MOSFETs utilizing advanced trench technology. They offer excellent RDS(ON) and low gate charge, making them suitable for a wide range of power switching applications, including hard switched and high frequency circuits, and uninterruptible power supplies. Their high density cell design, fully characterized avalanche voltage and current, and good stability with high EAS contribute to their robust performance.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Product Series: 2908B
- Part Numbers: KNX2908B, KNP2908B
- Package Types: TO-263 (KNX2908B), TO-220 (KNP2908B)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDS | 80 | V | |||
| Gate-source voltage | VGS | +20 | V | |||
| Continuous drain current | ID | 130 | A | |||
| Pulsed drain current (Note1) | IDM | 520 | A | |||
| Single pulse avalanche energy (Note2) | EAS | 900 | mJ | |||
| Operation junction and temperature range | TJ, TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.61 | C /W | |||
| Electrical Characteristics (TA=25C, unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V, ID=250A | 80 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | A |
| Gate-Source Forward Leakage | IGSS(F) | VGS=+20V | - | - | 100 | nA |
| Gate-Source Reverse Leakage | IGSS(R) | VGS=-20V | - | - | -100 | nA |
| On Characteristics | ||||||
| Drain-source on-Resistance (Note3) | RDS(on) | VGS=10V, ID=35A | - | 5.0 | 6.0 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 2.9 | 4.0 | V |
| Forward Transconductance | gfs | VDS=5V, ID=20A | - | 42 | - | S |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDD=40V, VGS=10V, ID =20A | - | 160 | - | nC |
| Gate-source charge | Qgs | - | 31 | - | ||
| Gate-drain charge | Qgd | - | 50 | - | ||
| Turn-on delay time | td(on) | VDD=30V, ID=40A, RGEN=3, VGS=10V | - | 24 | - | ns |
| Rise time | tr | - | 41 | - | ||
| Turn-off delay time | td(off) | - | 75 | - | ||
| Fall time | tf | - | 25 | - | ||
| Switching Characteristics (Note 4) | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 7950 | - | pF |
| Output capacitance | Coss | - | 460 | - | ||
| Reverse transfer capacitance | Crss | - | 380 | - | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS=0V, IS=20A | - | - | 1.3 | V |
2409302301_KIA-Semicon-Tech-KNB2908B_C2896650.pdf
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