Double Trench N Channel MOSFET KIA Semicon Tech KCB3010A for Motor Driver and Switching Applications
Key Attributes
Model Number:
KCB3010A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
163A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Output Capacitance(Coss):
880pF
Input Capacitance(Ciss):
6.7nF
Pd - Power Dissipation:
175W
Gate Charge(Qg):
89.5nC@10V
Mfr. Part #:
KCB3010A
Package:
TO-263
Product Description
Product Overview
The KCX3010A is an N-channel Enhanced Power MOSFET utilizing advanced double trench technology. This design significantly reduces conduction losses, enhances switching performance, and improves avalanche energy. It is an ideal component for motor drivers and high-speed switching applications.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCX3010A
- Package: TO-263
- Ordering Part Number: KCB3010A
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 100 | - | - | V |
| Drain-source on-Resistance | RDS(on) | VGS=4.5V,ID=20A | - | 4.0 | 4.5 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | - | 4.0 | V |
| Drain-Source Leakage Current | IDSS | VDS=100V, VGS=0V | - | - | 1 | A |
| Drain-Source Leakage Current @TC=125 C | IDSS | VDS=80V, VGS=0V | - | - | 100 | A |
| Gate-Soure Forward Leakage | IGSS(F) | VGS=+20V | - | - | 100 | nA |
| Gate-Soure Reverse Leakage | IGSS(R) | VGS=-20V | - | - | -100 | nA |
| Total gate charge | Qg | VDD=50V, VGS=10V ID =100A | - | 89.5 | - | nC |
| Gate-source charge | Qgs | VDD=50V, VGS=10V ID =100A | - | 44.3 | - | |
| Gate-drain charge | Qgd | VDD=50V, VGS=10V ID =100A | - | 13.2 | - | |
| Turn-on delay time | td(on) | VDD=50V, ID=55A, RGEN=4.7, VGS=10V, Resistive Load | - | 32 | - | ns |
| Rise time | tr | VDD=50V, ID=55A, RGEN=4.7, VGS=10V, Resistive Load | - | 55 | - | |
| Turn-off delay time | td(off) | VDD=50V, ID=55A, RGEN=4.7, VGS=10V, Resistive Load | - | 68.5 | - | |
| Fall time | tf | VDD=50V, ID=55A, RGEN=4.7, VGS=10V, Resistive Load | - | 31 | - | |
| Input capacitance | Ciss | VDS=50V,VGS=0V, f=1MHz | - | 6700 | - | pF |
| Output capacitance | Coss | VDS=50V,VGS=0V, f=1MHz | - | 880 | - | |
| Reverse transfer capacitance | Crss | VDS=50V,VGS=0V, f=1MHz | - | 145 | - | |
| Continuous Source Current | IS | - | - | - | 120 | A |
| Maximum Pulsed Current | ISM | - | - | - | 480 | A |
| Diode Forward voltage | VSD | VGS=0V,IS=55A | - | - | 1.2 | V |
| Body diode reverse recovery time | trr | Is=55A,VDD=80V, TJ=150C dl/dt=100A/us | - | 75 | - | ns |
| Body diode reverse recovery charge | Qrr | Is=55A,VDD=80V, TJ=150C dl/dt=100A/us | - | 220 | - | nC |
2409302232_KIA-Semicon-Tech-KCB3010A_C2839424.pdf
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