N channel mosfet KIA Semicon Tech KNP2910B designed for power switching and uninterruptible power supply
Key Attributes
Model Number:
KNP2910B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
380pF
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
7.95nF
Gate Charge(Qg):
160nC@10V
Mfr. Part #:
KNP2910B
Package:
TO-220
Product Description
Product Overview
The KNX2910B is an N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide variety of power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: KIA
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDS | 100 | V | |||
| Gate-source voltage | VGS | +20 | V | |||
| Continuous drain current | ID | 130 | A | |||
| Pulsed drain current | IDM | (Note1) | 520 | A | ||
| Single pulse avalanche energy | EAS | (Note2) | 650.25 | mJ | ||
| Power Dissipation | PD | Derating Factor above 25C | 211 | W/C | ||
| Operation junction and temperature range | TJ, TSTG | -55 | 175 | C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.71 | C /W | |||
| Electrical Characteristics (TA=25C,unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V, VGS=0V | - | - | 1 | A |
| Gate-Soure Forward Leakage | IGSS(F) | VGS=+20V | - | - | 100 | nA |
| Gate-Soure Reverse Leakage | IGSS(R) | VGS=-20V | - | - | -100 | nA |
| On Characteristics | ||||||
| Drain-source on-Resistance | RDS(on) | VGS=10V,ID=35A (Note3) | - | 9.0 | 11 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.0 | 2.8 | 4.0 | V |
| Forward Transconductance | gfs | VDS=5V,ID=20A | - | 95 | - | S |
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDD=30V, VGS=10V, ID =30A | - | 160 | - | nC |
| Gate-source charge | Qgs | - | 31 | - | ||
| Gate-drain charge | Qg d | - | 50 | - | ||
| Turn-on delay time | td(on) | VDD=30V, ID=40A, RGEN=3, VGS=10V | - | 24 | - | ns |
| Rise time | tr | - | 22 | - | ||
| Turn-off delay time | td(off) | - | 92 | - | ||
| Fall time | tf | - | 42 | - | ||
| Switching Characteristics (Note 4) | ||||||
| Input capacitance | Ciss | VDS=25V,VGS=0V, f=1MHz | - | 7950 | - | pF |
| Output capacitance | Coss | - | 460 | - | ||
| Reverse transfer capacitance | Crss | - | 380 | - | ||
| Drain-Source Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS=0V,IS=20A | - | - | 1.3 | V |
2409302232_KIA-Semicon-Tech-KNP2910B_C2896655.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
