High Current N Channel MOSFET KIA Semicon Tech KNP2408A Designed for Power Switching and UPS Systems
Key Attributes
Model Number:
KNP2408A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
810pF
Output Capacitance(Coss):
950pF
Input Capacitance(Ciss):
13.5nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
260nC@10V
Mfr. Part #:
KNP2408A
Package:
TO-220
Product Description
Product Overview
The KNX2408A is an N-CHANNEL MOSFET from KIA SEMICONDUCTORS, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for a wide range of power switching applications, including hard switched and high frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: KNX2408A
Technical Specifications
| Parameter | Symbol | TO-220 | TO-263 | TO-247 | Units | Conditions |
| Drain-source voltage | VDSS | 80 | 80 | 80 | V | |
| Gate-source voltage | VGSS | +20 | V | |||
| Maximum junction temperature | TJ | 175 | C | |||
| Storage temperature range | TSTG | -55 to175 | C | |||
| Continuous drain current | ID | 190 | 190 | 190 | A | TC=25C |
| Pulse drain current | IDM | 760 | 760 | 760 | A | TC=25C (Note1) |
| Avalanche energy,single pulsed | EAS | 1.4 | 1.4 | 1.4 | J | (Note2) |
| Maximum power dissipation | PD | 270 | 326 | W | TC=25 C | |
| Thermal Resistance, Junction-to-Case | RJC | 0.55 | 0.46 | C /W | ||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0V,ID=250A | ||
| Drain-Source Leakage Current | IDSS | 1 | A | VDS=80V, VGS=0V | ||
| Gate-Soure Forward Leakage | IGSS(F) | 100 | nA | VGS=+20V | ||
| Gate-Soure Reverse Leakage | IGSS(R) | -100 | nA | VGS=-20V | ||
| Drain-source on-Resistance | RDS(on) | 3.7 / 4.5 | m | VGS=10V,ID=40A (typ./max.) (Note3) | ||
| Gate threshold voltage | VGS(th) | 2.0 / 2.8 / 4.0 | V | VDS=VGS, ID=250A (min/typ/max) | ||
| Forward Transconductance | gfs | 15 | S | VDS=5V,ID=15A | ||
| Total gate charge | Qg | 260 | nC | VDS=64V, VGS=10V ID =80A | ||
| Gate-source charge | Qgs | 75 | ||||
| Gate-drain charge | Qg d | 80 | ||||
| Turn-on delay time | td(on) | 25 | ns | VDD=40V, ID=40A, RGEN=3, VGS=10V | ||
| Rise time | tr | 21 | ns | |||
| Turn-off delay time | td(off) | 48 | ns | |||
| Fall time | tf | 18 | ns | |||
| Input capacitance | Ciss | 13500 | pF | VDS=25V,VGS=0V, f=1MHz | ||
| Output capacitance | Coss | 950 | pF | |||
| Reverse transfer capacitance | Crss | 810 | pF | |||
| Diode Forward voltage | VSD | 1.3 | V | VGS=0V,IS=40A | ||
2409302232_KIA-Semicon-Tech-KNP2408A_C2896646.pdf
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