High Current Schottky Diode KUU 1N5819W SL Designed for Low Voltage and High Frequency Rectification
Key Attributes
Model Number:
1N5819W SL
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
25A
Reverse Leakage Current (Ir):
1mA@40V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
600mV@1A
Current - Rectified:
1A
Mfr. Part #:
1N5819W SL
Package:
SOD-123
Product Description
Product Overview
SCHOTTKY BARRIER RECTIFIERS featuring guarding for overvoltage protection, low power loss, high efficiency, high current capability, and low forward voltage drop. Designed for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Utilizes metal silicon junction for majority carrier conduction.
Product Attributes
- Brand: 1N5819W SL
- Material: Metal silicon junction
Technical Specifications
| Parameter | Symbol | Unit | Value | Conditions |
| Maximum DC Blocking Voltage | VDC | V | 40 | |
| Maximum Repetitive Peak Reverse Voltage | VRRM | V | 40 | |
| Maximum RMS voltage | VRMS | V | 28 | |
| Maximum Average Forward Rectified Current | IF(AV) | A | 1 | |
| Peak Forward Surge Current, 8.3ms Single Half Sine-wave | IFSM | A | 25 | Superimposed On Rated Load (JEDEC method) |
| Maximum Instantaneous Forward Voltage | VF | V | 0.6 | at 1 A |
| V | 0.9 | at 3 A | ||
| Maximum Instantaneous Reverse Current | IR | mA | 0.1 | at Rated DC Reverse Voltage, TA = 100C |
| mA | 0.4 | at Rated DC Reverse Voltage, TA = 25C | ||
| Typical Junction Capacitance | Cj | pF | 110 | |
| Storage and Operating Junction Temperature Range | Tj stg | C | -55 ~ +125 |
2410010204_KUU-1N5819W-SL_C6562211.pdf
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