Low RDS ON 2 Milliohm N Channel Power MOSFET KIA Semicon Tech KNB2803C 150A 30V for Power Management
Key Attributes
Model Number:
KNB2803C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
530pF
Number:
1 N-channel
Input Capacitance(Ciss):
6nF
Output Capacitance(Coss):
625pF
Pd - Power Dissipation:
158W
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
KNB2803C
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS KNB2803C is a 150A, 30V N-Channel Power MOSFET featuring Advanced Trench technology. It offers a low RDS(ON) of 2.0m (typ.) at VGS=10V, super low gate charge, and excellent CdV/dt effect decline. This device is 100% Vds and UIS tested, with a green device option available. It is suitable for various power management applications requiring high current and low voltage operation.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNB2803C
- Package: TO-263
- Origin: KIA SEMICONDUCTORS (KMOS Semiconductor)
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=30V,VGS=0V,TC=25C | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 2.0 | 2.8 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 2.9 | 3.8 | m |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1.0MHz | - | 0.7 | - | |
| Input Capacitance | Ciss | VDS=15V, VGS=0V , f=1.0MHz | - | 6000 | - | pF |
| Output Capacitance | Coss | - | - | 625 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 530 | - | pF |
| Turn-On Delay Time | td(on) | VDS=15V, VGS=10V, RG=3.0, ID=30A | - | 10 | - | ns |
| Rise Time | tr | - | - | 25 | - | ns |
| Turn-Off DelayTime | td(off) | - | - | 72 | - | ns |
| Fall Time | tf | - | - | 45 | - | ns |
| Total Gate Charge | Qg | VDS=15V, VGS=10V , ID=30A | - | 110 | - | nC |
| Gate-Source Charge | Qgs | - | - | 10 | - | nC |
| Gate-Drain Charge | Qg | - | - | 18 | - | nC |
| Source-Drain Current (Body Diode) | ISD | - | - | - | 150 | A |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 25 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 15 | - | nC |
| Continuous Drain Current | ID | TC=25C | - | - | 150 | A |
| Continuous Drain Current | ID | TC=100C | - | - | 96 | A |
| Pulsed Drain Current | IDM | - | - | - | 720 | A |
| Total Power Dissipation | PD | TC=25C | - | - | 158 | W |
| Avalanche Energy | EAS | - | - | - | 576 | mJ |
| Operation Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal Resistance, Junction-to-Case | RJC | - | - | 0.95 | - | C/W |
2509041042_KIA-Semicon-Tech-KNB2803C_C51883045.pdf
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