200V N CHANNEL MOSFET KIA Semicon Tech KIA40N20AF with RoHS compliance and optimized switching speed
Key Attributes
Model Number:
KIA40N20AF
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
40A
RDS(on):
80mΩ@10V,16A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
150pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
175W
Input Capacitance(Ciss):
1.56nF@25V
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
KIA40N20AF
Package:
TO-220F
Product Description
Product Overview
The KIA SEMICONDUCTORS 40N20A is a 200V N-CHANNEL MOSFET designed for high-performance applications. It features low on resistance (RDS(ON)=0.08 Max. @VGS=10V), low gate charge, and fast switching capabilities. This RoHS compliant component is ideal for use in DC-DC converters, DC-AC converters for UPS systems, SMPS, and motor controls.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 40N20A
- Type: N-CHANNEL MOSFET
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 200 | - | - | V |
| Breakdown voltage temperature coefficient | BVDSS/TJ | Reference 25 ID=250uA | - | 0.2 | - | V/C |
| Drain-source leakage current | IDSS | VDS=200V, VGS=0V | - | - | 1 | A |
| Drain-source leakage current | IDSS | VDS=160V, TJ=125C | - | - | 10 | A |
| Gate-source forward leakage | IGSS | VGS=30V | - | - | 100 | nA |
| Gate-source reverse leakage | IGSS | VGS=-30V | - | - | -100 | nA |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=16A | - | 0.08 | 0.1 | |
| Gate threshold voltage | VGS(TH) | VDS= VGS, ID=250uA | 2 | - | 4 | V |
| Forward transconductance | gfs | VDS=40V, ID=16A | - | 22 | - | S |
| Input capacitance | Ciss | VDS=25V,VGS=0V f=1MHz | - | 1560 | - | pF |
| Output capacitance | Coss | VDS=25V,VGS=0V f=1MHz | - | 370 | - | pF |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V f=1MHz | - | 150 | - | pF |
| Turn-on delay time | td(on) | VDD=100V, ID=32A, RG=25,VGS=10V | - | 26 | - | ns |
| Rise time | tr | VDD=100V, ID=32A, RG=25,VGS=10V | - | 32 | - | ns |
| Turn-off delay time | td(off) | VDD=100V, ID=32A, RG=25,VGS=10V | - | 141 | - | ns |
| Fall time | tf | VDD=100V, ID=32A, RG=25,VGS=10V | - | 83 | - | ns |
| Total gate charge | Qg | VDS=160V, ID=32A, VGS=10V | - | 50 | - | nC |
| Gate-source charge | Qgs | VDS=160V, ID=32A, VGS=10V | - | 12 | - | nC |
| Gate-drain (Miller)charge | Qg | VDS=160V, ID=32A, VGS=10V | - | 22 | - | nC |
| Continuous source currentbody diode | IS | Integral pn-diode in MOSFET | - | - | 40 | A |
| Maximum pulsed currentbody diode | ISM | Integral pn-diode in MOSFET | - | - | 128 | A |
| Diode forward voltage | VSD | IS=32A, VGS=0V | - | - | 1.4 | V |
| Reverse recovery time | trr | IS=32A, VGS=0V dI/dt=100A/s | - | 215 | - | ns |
| Reverse recovery charge | Qrr | IS=32A, VGS=0V dI/dt=100A/s | - | 1.8 | - | uC |
2411121116_KIA-Semicon-Tech-KIA40N20AF_C5156072.pdf
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