power conversion device KIA Semicon Tech KIA9435 P channel MOSFET for synchronous buck converters
Key Attributes
Model Number:
KIA9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
RDS(on):
105mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Input Capacitance(Ciss):
525pF@0V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
12nC@20V
Mfr. Part #:
KIA9435
Package:
SOP-8
Product Description
Product Overview
The KIA9435 is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, contributing to efficient power conversion. This device meets RoHS and Green Product requirements.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 9435
- Channel Type: P-CHANNEL
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -30 | - | - | V |
| BVDSS Temperature coefficient | BVDSS/ TJ | Reference to 25 C, ID=-1mA | - | -0.023 | - | V/ C |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V, TJ=25C | - | - | -1 | A |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V, TJ=55C | - | - | 5 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | -1.0 | -1.6 | -3.0 | V |
| VGS(th)Temperature coefficient | VGS(th) | - | -4 | - | mV/C | |
| Static drain-source on- resistance | RDS(on) | VGS=-10V,ID=-4A | - | 50 | 65 | m |
| Static drain-source on- resistance | RDS(on) | VGS=-4.5V,ID=-4A | - | 75 | 105 | m |
| Forward transcend ductance | gFS | VDS=-15V, ID=-4.5A | - | 8 | - | S |
| Total gate charge | Qg | VDS=-15V, VGS=-20V ID =-5.3A | - | 12 | - | nC |
| Gate-source charge | Qgs | - | 2.3 | - | ||
| Gate-drain charge | Qgd | - | 3.1 | - | ||
| Turn-on delay time | td(on) | VDD=-15V, RG=6, VGS=-10V ID=-1A | - | 15 | - | ns |
| Rise time | tr | - | 13.2 | - | ||
| Turn-off delay time | td(off) | - | 57 | - | ||
| Fall time | tf | - | 20 | - | ||
| Input capacitance | Ciss | VGS=0V, VDS=-15V F=1.0MHZ | - | 525 | - | pF |
| Output capacitance | Coss | - | 132 | - | ||
| Reverse transfer capacitance | Crss | - | 70 | - | ||
| Continuous source current | IS | VG=VD=0V,Force current | - | - | -5.3 | A |
| Pulsed source current | ISM | - | - | -20 | A | |
| Diode forward voltage | VSD | VGS=0V,IS=-4A, TJ=25C | - | - | 1.5 | V |
| Parameter | Symbol | Rating | Units |
| Drain-source voltage | VDSS | -30 | V |
| Gate-source voltage | VGS | +20 | V |
| Continuous drain current | ID | -5.3 | A |
| Pulsed drain current | IDM | -20 | A |
| Total power dissipation | PD | 2.5 | W |
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C |
| Thermal resistance-junction to case | RJC | 50 | C/W |
2409302203_KIA-Semicon-Tech-KIA9435_C2896662.pdf
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