P channel MOSFET KIA Semicon Tech KPE4403A optimized for synchronous buck converter power efficiency
Key Attributes
Model Number:
KPE4403A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 P-Channel
Output Capacitance(Coss):
95pF
Pd - Power Dissipation:
1.5W
Input Capacitance(Ciss):
580pF
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
KPE4403A
Package:
SOP-8
Product Description
Product Overview
The KPE4403A is a high cell density trenched P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and gate charge characteristics, contributing to efficient power conversion. This device meets RoHS and Green product requirements.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KPE4403A
- Channel Type: P-CHANNEL
- Certifications: RoHS, Green device available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -30 | - | - | V |
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25 C,ID=-1mA | - | -0.023 | - | V/ C |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V,TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V,TJ=55C | - | - | 5 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -1.2 | - | -2.5 | V |
| Gate threshold voltage Temperature coefficient | VGS(th) | - | -4 | - | Mv/ C | |
| Static drain-source on- resistance | RDS(on) | VGS=-10V,ID=-4A | - | 40 | 45 | m |
| Static drain-source on- resistance | RDS(on) | VGS=-4.5V,ID=-3A | - | 60 | 75 | m |
| Forward transcend ductance | gFS | VDS=-5V, ID=-4A | - | 10 | - | S |
| Total gate charge | Qg | VDS=-15V, VGS=-4.5V ID =-4A | - | 6.5 | - | nC |
| Gate-source charge | Qgs | - | 2.2 | - | ||
| Gate-drain charge | Qgd | - | 2 | - | ||
| Turn-on delay time | td(on) | VDD=-15V, RG=3.3, VGS=-10V ID=-4A | - | 2.7 | - | ns |
| Rise time | tr | - | 8.6 | - | ||
| Turn-off delay time | td(off) | - | 40 | - | ||
| Fall time | tf | - | 5 | - | ||
| Input capacitance | Ciss | VGS=0V, VDS=-15V F=1.0MHZ | - | 580 | - | pF |
| Output capacitance | Coss | - | 95 | - | ||
| Reverse transfer capacitance | Crss | - | 80 | - | ||
| Continuous source current | IS | VG=VD=0V,Force current | - | - | -5.0 | A |
| Pulsed source current | ISM | - | - | -25 | A | |
| Diode forward voltage | VSD | VGS=0V,IS=-1A, TJ=25C | - | - | -1.3 | V |
| Reverse recovery time | trr | IF=-4A,dl/dt=100A/us, TJ=25C | - | 7.5 | - | nS |
| Reverse recovery charge | Qrr | - | 2.6 | - | nC |
2409302203_KIA-Semicon-Tech-KPE4403A_C2924929.pdf
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