High Current MOSFET KIA Semicon Tech KNB2404A 190A 40V N Channel for Power Conversion Circuits
Key Attributes
Model Number:
KNB2404A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
190A
Operating Temperature -:
-
RDS(on):
3.5mΩ@10V,30A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
675pF
Number:
1 N-channel
Output Capacitance(Coss):
1.4nF
Input Capacitance(Ciss):
6.01nF
Pd - Power Dissipation:
123W
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
KNB2404A
Package:
TO-263
Product Description
Product Overview
The KNX2404A is a 190A, 40V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low RDS(on) for minimal conductive loss and high avalanche current, making it suitable for power supply and DC-DC converter applications.
Product Attributes
- Brand: KIA
- Device Type: N-CHANNEL MOSFET
- Part Number: KNX2404A
- Lead Free/Green Device: Available
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit | |
| Static characteristics | BVDSS | VGS=0V,IDS=250A | 40 | - | - | V | |
| IDSS | VDS=64V,VGS=0V | - | - | 1 | A | ||
| VGS(th) | VDS=VGS, IDS=250A | 2 | - | 4 | V | ||
| IGSS | VGS=+25V,VDS=0V | - | - | +100 | nA | ||
| RDS(on) | VGS=10V,IDS=30A | - | 2.2 | 3.5 | m | ||
| Forward Transconductance | Gfs | VDS=5V, ID=40A | - | 135 | - | S | |
| Diode characteristics | VSD | ISD=40A,VGS=0V | - | 0.9 | 1.3 | V | |
| IS | - | - | - | 190 | A | ||
| trr | IS=40A,dl/dt=100A/s | - | 55 | - | nS | ||
| Qrr | - | - | - | 70 | - | nC | |
| Dynamic characteristics | RG | VGS=0V, VDS=0V,F=1MHz | - | 2.0 | - | ||
| Ciss | VGS=0V, VDS=25V, F=1.0MHz | - | 6010 | - | pF | ||
| Coss | - | - | 1400 | - | - | - | |
| Crss | - | - | 675 | - | - | - | |
| td(ON) | VDD=25V,ID=90A, VGS=10V,RG=2.7 | - | 25 | - | nS | ||
| Switching characteristics | tr | - | - | 102 | - | - | - |
| td(OFF) | - | - | 62 | - | - | - | |
| tf | - | - | 84 | - | - | - | |
| Qg | VDS=40V, VGS=10V, ID=32A,F=1.0MHz | - | 150 | - | nC | ||
| Gate charge characteristics | Qgs | - | - | 32 | - | - | - |
| Qgd | - | - | 70 | - | - | - | |
| Absolute maximum ratings | VDSS | - | - | 40 | - | V | |
| VGSS | - | - | +25 | - | V | ||
| ID | TC=25C(Silicon limited) | - | - | 190 | A | ||
| ID | TC=25C(Package limited) | - | - | 120 | A | ||
| ID | TC=100C (Silicon limited) | - | - | 109 | A | ||
| Pulsed drain current | IDP | TC=25 C | - | - | 480 | A | |
| IAS | Avalanche current(L=0.5mH) | - | - | 46 | A | ||
| Avalanche energy | EAS | (L=0.5mH) | - | - | 529 | mJ | |
| Maximum power dissipation | PD | TC=25 C | - | - | 123 | W | |
| PD | TC=100 C | - | - | 82 | W | ||
| Junction & storage temperature range | TJ,TSTG | - | -55 | - | 150 | C | |
| Thermal characteristics | Rjc | Typical | - | 1.02 | - | C/W | |
| Rja | - | - | 80 | - | - | - |
2409302301_KIA-Semicon-Tech-KNB2404A_C1509093.pdf
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