N Channel MOSFET 40A 300V Featuring KIA Semicon Tech KNH9130A for DC DC Converters and Motor Controls
Key Attributes
Model Number:
KNH9130A
Product Custom Attributes
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
1 N-channel
Output Capacitance(Coss):
250pF
Input Capacitance(Ciss):
3.1nF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
95nC@10V
Mfr. Part #:
KNH9130A
Package:
TO-3P
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX9130A is a 40A, 300V N-CHANNEL MOSFET featuring proprietary new planar technology. It offers a typical RDS(ON) of 100m@VGS=10V, low gate charge to minimize switching loss, and a fast recovery body diode. This MOSFET is suitable for DC-DC converters, DC-AC inverters for UPS, SMPS, and motor controls.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model: KNX9130A
Technical Specifications
| Symbol | Parameter | TO-220 | TO-3P | Unit |
| VDSS | Drain-to-Source Voltage | 300 | 300 | V |
| VGSS | Gate-to-Source Voltage | 20 | V | |
| ID | Continuous Drain Current | 40 | A | |
| IDM | Pulsed Drain Current | Figure6 | A | |
| EAS | Single Pulse Avalanche Energy | 1250 | mJ | |
| dv /dt | Peak Diode Recovery dv/dt | 5.0 | V/ns | |
| PD | Power Dissipation | 125 | 150 | W |
| RJC | Thermal Resistance, Junction-to-Case | 1.0 | 0.83 | C /W |
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | -- | C |
| TJ&TSTG | Operating and Storage Temperature Range | -55 to 150 | C | |
| BVDSS | Drain-to-Source Breakdown Voltage | 300 | V | |
| IDSS | Drain-to-Source Leakage Current | 1 (100@125C) | uA | |
| IGSS | Gate-to-Source Leakage Current | 100 | nA | |
| RDS(ON) | Static Drain-to-Source On-Resistance | 100 (150 Max) | m | |
| VGS(TH) | Gate Threshold Voltage | 2.0 (4.0 Max) | V | |
| gFS | Forward Transconductance | 60 | S | |
| Ciss | Input Capacitance | 3100 | pF | |
| Coss | Output Capacitance | 250 | pF | |
| Crss | Reverse Transfer Capacitance | 80 | pF | |
| Qg | Total Gate Charge | 95 | nC | |
| Qgs | Gate-to-Source Charge | 15 | -- | |
| Qgd | Gate-to-Drain (Miller) Charge | 40 | -- | |
| td(ON) | Turn-on Delay Time | 20 | nS | |
| trise | Rise Time | 32 | -- | |
| td(OFF) | Turn-Off Delay Time | 64 | -- | |
| tfall | Fall Time | 26 | -- | |
| ISD | Continuous Source Current | 40 | A | |
| ISM | Pulsed Source Current | 160 | -- | |
| VSD | Diode Forward Voltage | 1.5 | V | |
| trr | Reverse recovery time | 255 | ns | |
| Qrr | Reverse recovery charge | 400 | uC | |
2410010001_KIA-Semicon-Tech-KNH9130A_C455992.pdf
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