High Speed Power MOSFET KIA Semicon Tech KIA18N50HF 500V 18A N Channel for Switching Applications
Key Attributes
Model Number:
KIA18N50HF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
18A
Operating Temperature -:
-
RDS(on):
320mΩ@10V,9A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.5nF
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
KIA18N50HF
Package:
TO-220F-3
Product Description
Product Overview
The KIA18N50H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies and active power factor correction, offering features like low gate charge, fast switching capability, specified avalanche energy, and improved dv/dt capability.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 18N50H
- Type: N-CHANNEL MOSFET
- Voltage Rating: 500V
- Current Rating: 18A
Technical Specifications
| Parameter | Symbol | TO220F | TO247 | Units |
| Absolute Maximum Ratings (TC= 25 C , unless otherwise notes) | ||||
| Drain-source voltage | VDSS | 500 | 500 | V |
| Gate-source voltage | VGSS | +30 | +30 | V |
| Drain current continuous TC=25C | ID | 18.0* | 18.0 | A |
| Drain current continuous TC=100C | ID | 10.8* | 10.8 | A |
| Drain current pulsed (note1) | IDP | 72* | 72 | A |
| Avalanche energy Repetitive (note1) | EAR | 23.5 | 23.5 | mJ |
| Avalanche energy Single pulse (note2) | EAS | 990 | 990 | mJ |
| Peak diode recovery dv/dt (note 3) | dv/dt | 4.5 | 4.5 | V/ns |
| Total power dissipation TC=25C | PD | 38.5 | 235 | W |
| Junction temperature | TJ | +150 | C | |
| Storage temperature | TSTG | -55~+150 | C | |
| Thermal Characteristics | ||||
| Thermal resistance,junction-ambient | RthJA | 62.5 | 40 | C/W |
| Thermal resistance,Junction-case | RthJC | 3.3 | 0.52 | C/W |
| Electrical Characteristics (TJ=25C,unless otherwise notes) | ||||
| Off Characteristics | ||||
| Drain-source breakdown voltage | BVDSS | 500 | 500 | V |
| Zero gate voltage drain current | IDSS | 1 | 1 | A |
| Gate-body leakage current | IGSS | 100 | 100 | nA |
| On Characteristics | ||||
| Gate threshold voltage | VGS(th) | 3.0 | 5.0 | V |
| Static drain-source on-resistance | RDS(on) | 0.25 | 0.32 | |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 2500 | 2500 | pF |
| Output capacitance | Coss | 400 | 400 | pF |
| Reverse transfer capacitance | Crss | 40 | 40 | pF |
| Switching Characteristics | ||||
| Turn-on delay time | td(on) | 70 | 70 | ns |
| Rise time | tr | 190 | 190 | ns |
| Turn-off delay time | td(off) | 100 | 100 | ns |
| Fall time | tf | 100 | 100 | ns |
| Total gate charge | Qg | 50 | 50 | nC |
| Gate-source charge | Qgs | 14 | 14 | nC |
| Gate-drain charge | Qgd | 22 | 22 | nC |
| Drain-source Diode Characteristics | ||||
| Drain-source diode forward voltage | VSD | 1.5 | 1.4 | V |
| Continuous drain-source current | ISD | 18.0 | 18.0 | A |
| Pulsed drain-source current | ISM | 72 | 72 | A |
| Reverse recovery time | trr | 550 | 550 | ns |
| Reverse recovery charge | Qrr | 5.5 | 5.5 | C |
2410010000_KIA-Semicon-Tech-KIA18N50HF_C176893.pdf
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