N Channel MOSFET 10A 450V KIA Semicon Tech KNF6145A with Low Gate Charge and Fast Recovery Body Diode
Key Attributes
Model Number:
KNF6145A
Product Custom Attributes
Drain To Source Voltage:
450V
Current - Continuous Drain(Id):
11A
RDS(on):
500mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
18pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
45W
Input Capacitance(Ciss):
1.2nF@25V
Gate Charge(Qg):
25nC@10V
Mfr. Part #:
KNF6145A
Package:
TO-220F
Product Description
Product Overview
This 10A, 450V N-Channel MOSFET from KIA SEMICONDUCTORS, model KNF6145A, utilizes proprietary new planar technology for high performance. It offers a low ON-resistance of 0.39 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal for ballast and lighting, DC-AC inverters, and other applications.
Product Attributes
- Brand: KIA
- Part Number: KNF6145A
- Package: TO-220F
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | 450 | V | |
| Gate-to-Source Voltage | VGSS | 30 | V | |
| Continuous Drain Current | ID | 11 | A | TC=25C |
| Continuous Drain Current | ID | Figure 3 | A | TC=100C |
| Pulsed Drain Current | IDM | Figure 6 | A | VGS=10V |
| Single Pulse Avalanche Energy | EAS | 500 | mJ | |
| Peak Diode Recovery dv/dt | dv/dt | 5.0 | V/ns | ISD=10A, di/dt<100A/us, VDD |
| Power Dissipation | PD | 45 | W | |
| Derating Factor above 25C | PD | 0.37 | W/C | |
| Maximum Temperature for Soldering (Leads) | TL | 300 | C | 0.063in (1.6mm) from Case for 10 seconds |
| Maximum Temperature for Soldering (Package Body) | TPAK | 260 | C | for 10 seconds |
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 150 | C | |
| Thermal Resistance, Junction-to-Case | RJC | 2.7 | C/W | |
| Thermal Resistance, Junction-to-Ambient | RJA | 100 | C/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | 450 | V | VGS=0V, ID=250uA |
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=450V, VGS=0V |
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=360V,TJ=125C |
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V |
| Drain-to-Source ON Resistance | RDS(ON) | 0.39 | VGS=10V, ID=5A (typ.) | |
| Drain-to-Source ON Resistance | RDS(ON) | 0.5 | VGS=10V, ID=5A (max.) | |
| Gate Threshold Voltage | VGS(TH) | 2.0 | V | VDS=VGS,ID=250uA (min.) |
| Gate Threshold Voltage | VGS(TH) | 4.0 | V | VDS=VGS,ID=250uA (max.) |
| Forward Transconductance | gfs | 12 | S | VDS=20V,ID=10A (typ.) |
| Input Capacitance | Ciss | 1200 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Output Capacitance | Coss | 140 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Reverse Transfer Capacitance | Crss | 18 | pF | VGS=0V,VDS=25V, f=1.0MHZ (typ.) |
| Total Gate Charge | Qg | 25 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Gate-to-Source Charge | Qgs | 6 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Gate-to-Drain (Miller) Charge | Qg | 10 | nC | VDD=200V,ID=10A, VGS=0 to 10V (typ.) |
| Turn-on Delay Time | td(ON) | 12 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Rise Time | trise | 24 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Turn-Off Delay Time | td(OFF) | 40 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Fall Time | tfall | 26 | nS | VDD=200V, ID=10A, RG=12,VGS=10V (typ.) |
| Continuous Source Current | ISD | 10 | A | Integral PN-diode in MOSFET |
| Pulsed Source Current | ISM | 40 | A | |
| Forward Voltage | VSD | 1.5 | V | IS=10A, VGS=0V (max.) |
| Reverse recovery time | trr | 303 | ns | IF=10A, VGS=0V diF/dt=100A/s, TJ=+150C (typ.) |
| Reverse recovery charge | Qrr | 1.8 | uC | IF=10A, VGS=0V diF/dt=100A/s, TJ=+150C (typ.) |
2411121110_KIA-Semicon-Tech-KNF6145A_C41369554.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
