P channel MOSFET device KIA Semicon Tech KPY3404A featuring low RDS ON and advanced trench technology
Key Attributes
Model Number:
KPY3404A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
85A
Operating Temperature -:
-55℃~+175℃
RDS(on):
8mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
340pF
Number:
1 P-Channel
Output Capacitance(Coss):
540pF
Input Capacitance(Ciss):
6.62nF
Pd - Power Dissipation:
58W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
KPY3404A
Package:
DFN-8(5x6)
Product Description
Product Overview
The KIA SEMICONDUCTORS KPY3404A is a high-performance P-CHANNEL MOSFET designed for demanding applications. It features a low on-resistance (RDS(ON)=5m typ. @ VGS=-10V), super low gate charge, and 100% EAS guaranteed. This device offers excellent CdV/dt effect decline and is built with advanced high cell density Trench technology. It is available as a Green Device.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KPY3404A
- Package: DFN5*6
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit | ||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | - | - | V | ||||
| Gate-Source Voltage | VGS | ±20 | V | |||||||
| Continuous Drain Current | ID | VGS@-10V, TC=25°C | - | - | -85 | A | ||||
| Continuous Drain Current | ID | VGS@-10V, TC=100°C | - | - | -53 | A | ||||
| Pulse Drain Current | IDM | Tested | - | - | -200 | A | ||||
| Single Pulse Avalanche Energy | EAS | - | 72 | - | mJ | |||||
| Avalanche Current | IAS | - | -38 | - | A | |||||
| Maximum Power Dissipation | PD | TC=25°C | - | - | 58 | W | ||||
| TC=100°C | - | - | 31 | W | ||||||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 175 | °C | |||||
| Thermal Resistance, Junction-to-Ambient | RθJA | 1) | - | - | 62 | °C/W | ||||
| Thermal Resistance, Junction-to-Case | RθJC | 1) | - | - | 2.4 | °C/W | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | - | - | -1 | μA | ||||
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA | ||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250μA | -1.1 | -1.7 | -2.5 | V | ||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-30A | - | 5 | 6 | mΩ | ||||
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-20A | - | 6.7 | 8 | mΩ | ||||
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1MHz | - | 6620 | - | pF | ||||
| Output Capacitance | Coss | - | 540 | - | pF | |||||
| Reverse Transfer Capacitance | Crss | - | 340 | - | pF | |||||
| Total Gate Charge | Qg | VDS=-20V, ID=-8A, VGS=-10V | - | 115 | - | nC | ||||
| Gate Source Charge | Qgs | - | 12 | - | nC | |||||
| Gate Drain Charge | Qg | - | 20 | - | nC | |||||
| Turn-on Delay Time | td(on) | VDS=-20V, ID=-1A, RL=1.6Ω, VGS=-10V | - | 15 | - | nS | ||||
| Turn-on Rise Time | tr | - | 16 | - | nS | |||||
| Turn-Off Delay Time | td(off) | - | 65 | - | nS | |||||
| Turn-Off Fall Time | tf | - | 30 | - | nS | |||||
| Source-Drain Current(Body Diode) | ISD | - | - | -76 | A | |||||
| Forward on voltage | VSD | ISD=-8A, VGS=0V | - | -1.2 | - | V | ||||
2411121110_KIA-Semicon-Tech-KPY3404A_C41369558.pdf
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