Low RDS ON 18.5 milliohm typical at VGS 10V KIA Semicon Tech KCP3525A MOSFET for motor control and UPS applications
Key Attributes
Model Number:
KCP3525A
Product Custom Attributes
Drain To Source Voltage:
250V
Current - Continuous Drain(Id):
70A
RDS(on):
100mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
320pF
Pd - Power Dissipation:
250W
Input Capacitance(Ciss):
6.85nF@125V
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
KCP3525A
Package:
TO-220
Product Description
Product Overview
This 70A, 250V N-CHANNEL MOSFET from KIA SEMICONDUCTORS utilizes SGT MOSFET technology with proprietary new trench technology. It features a low RDS(ON) of 18.5m(typ.)@VGS=10V, minimizing switching loss due to its low gate charge. The device also incorporates a fast recovery body diode, making it suitable for hard switching and high-speed circuits, motor control, and UPS applications.
Product Attributes
- Brand: KIA
- Part Number: KCP3525A
- Package: TO-220
- Technology: SGT MOSFET, Proprietary New Trench Technology
- Revision: 1.0
- Date: Mar 2024
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 250 | - | - | V |
| Gate-to-Source Voltage | VGSS | - | - | ±20 | V | |
| Continuous Drain Current | ID | Tc=25 °C | - | - | 70 | A |
| Continuous Drain Current | ID | Tc=100 °C | - | - | 48 | A |
| Pulsed Drain Current | IDM | at VGS=10V | - | - | 280 | A |
| Single Pulse Avalanche Energy | EAS | L=10mH | - | - | 2000 | mJ |
| Peak Diode Recovery dv/dt | dv/dt | - | - | 5.0 | V/ns | |
| Power Dissipation | PD | - | - | 250 | W | |
| Derating Factor above 25°C | PD | - | 2 | - | W/°C | |
| Maximum Temperature for Soldering (Leads) | TL | at 0.063in (1.6mm) from Case for 10 seconds | - | - | 300 | °C |
| Maximum Temperature for Soldering (Package Body) | TPAK | for 10 seconds | - | - | 260 | °C |
| Operating and Storage Temperature Range | TJ&TSTG | -55 | - | 150 | °C | |
| Thermal Resistance, Junction-to-Case | RθJC | - | 0.5 | - | °C/W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | 62 | - | °C/W | |
| Drain-to-Source Leakage Current | IDSS | VDS=250V, VGS=0V | - | - | 1 | µA |
| Drain-to-Source Leakage Current | IDSS | VDS=200V,TJ=125°C | - | - | 100 | µA |
| Gate-to-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | - | - | ±100 | nA |
| Drain-to-Source ON Resistance | RDS(ON) | VGS=10V, ID=35A | - | 18.5 | 20 | mΩ |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.5 | - | 4.5 | V |
| Input Capacitance | Ciss | VGS=0V,VDS=125V, f=1.0MHZ | - | 6850 | - | pF |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Output Capacitance | Coss | - | 320 | - | pF | |
| Total Gate Charge | Qg | VDD=125V,ID=40A, VGS=10V | - | 78 | - | nC |
| Gate-to-Source Charge | Qgs | - | 34 | - | - | |
| Gate-to-Drain (Miller) Charge | Qgd | - | 10 | - | - | |
| Turn-on Delay Time | td(ON) | VDD=125V, ID=40A, RG=4.7Ω,VGS= 10V | - | 36 | - | nS |
| Rise Time | trise | - | 15 | - | - | |
| Turn-Off Delay Time | td(OFF) | - | 42 | - | - | |
| Fall Time | tfall | - | 10 | - | - | |
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | - | - | 70 | A |
| Pulsed Source Current | ISM | - | - | 280 | A | |
| Forward Voltage | VSD | IS=50A, VGS=0V | - | - | 1.2 | V |
| Reverse recovery time | trr | IF=40A, diF/dt=100A/μs | - | 232 | - | ns |
| Reverse recovery charge | Qrr | - | 991 | - | µC |
2411121110_KIA-Semicon-Tech-KCP3525A_C41369546.pdf
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