KIA Semicon Tech KCB3008B N Channel MOSFET Featuring Low RDS on and Excellent Gate Charge Suitable for Motor Drives
Key Attributes
Model Number:
KCB3008B
Product Custom Attributes
Drain To Source Voltage:
85V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
-
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
4.05nF@40V
Pd - Power Dissipation:
220W
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
KCB3008B
Package:
TO-263
Product Description
Product Overview
The KCX3008B is an 85V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, featuring advanced SGT technology for extremely low RDS(on) of typically 4.5 m at Vgs=10V. Its excellent gate charge x RDS(on) product (FOM) makes it suitable for Motor Drives, SR (Synchronous Rectification), DC/DC Converters, and general-purpose applications.
Product Attributes
- Brand: KIA
- Part Number: KCX3008B
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute maximum ratings | VDSS | 85 | V | |||
| ID | TC=25 C (Silicon limited) | 160 | A | |||
| ID | TC=25 C (Package limited) | 120 | A | |||
| ID | TC=100 C (Silicon limited) | 100 | A | |||
| Avalanche energy, single pulse | EAS | L=0.5mH, Rg=25 | 560 | mJ | ||
| Gate-Source voltage | VGS | 20 | V | |||
| Power dissipation | Ptot | TC = 25 C | 220 | W | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 175 | C | ||
| Thermal resistance, junction-ambient | RJA | 60 | C/W | |||
| Thermal resistance, Junction-case | RJC | 0.68 | ||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 85 | 90 | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=85V , VGS=0V ,Tj=25 C | - | 1 | A | |
| Zero Gate Voltage Drain Current | IDSS | VDS=68V , VGS=0V, Tj=125 C | - | 5 | ||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A ,Tj=25 C | 2.0 | 3.0 | 4.0 | V |
| Gate leakage current | IGSS | VGS=20V,VDS=0V | - | 100 | nA | |
| Gate leakage current | IGSS | VGS=-20V,VDS=0V | - | -100 | nA | |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=50A, Tj=25 C | 4.5 | 5.5 | m | |
| Transconductance | gfs | VDS=5V,ID=50A | 80 | - | S | |
| Gate Resistance | RG | VGS=0V,VDS=0V F=1MHz | 2.0 | - | ||
| Input capacitance | Ciss | VDS=40V,VGS=0V, F=1MHz | 4050 | - | pF | |
| Output capacitance | Coss | 650 | - | pF | ||
| Reverse transfer capacitance | Crss | 20 | - | pF | ||
| Turn-on delay time | td(on) | VDS=40V,Tj=25 C, ID=50A,VGS=10V,RL=3 | 21 | - | ns | |
| Rise time | tr | 41 | - | ns | ||
| Turn-off delay time | td(off) | 47 | - | ns | ||
| Fall time | tf | 25 | - | ns | ||
| Total gate charge | Qg | VDS=40V,ID=50A, VGS=10V, F=1MHz | 80 | - | nC | |
| Gate-source charge | Qgs | 23 | - | nC | ||
| Gate-drain charge | Qg | 24 | - | nC | ||
| Diode forward voltage | VSD | VGS=0V,ISD=50A | 0.85 | 1.4 | V | |
| Reverse recovery time | trr | IF=20A DlF/dt=100A/s | 60 | - | ns | |
| Reverse recovery charge | Qrr | 136 | - | uC |
2409302232_KIA-Semicon-Tech-KCB3008B_C2839423.pdf
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